Electrothermal Modeling and Analysis of Gallium Oxide Power Switching Devices

Kotecha, Ramchandra; Zakutayev, Andriy; Metzger, Wyatt K.; Paret, Paul; Moreno, Gilberto; Kekelia, Bidzina; Bennion, Kevin; Mather, Barry; Narumanchi, Sreekant; Kim, Samuel; Graham, Samuel

doi:10.1115/ipack2019-6453

Cited by 5 publications

(2 citation statements)

References 8 publications

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“…With the low intrinsic carrier concentration and UWBG of new semiconductor materials, i.e. 1.79*10 -23 cm -3 and 4.8 eV for Ga2O3 respectively, the promise of high-temperature and high-power operation is realizable [2][3][4].…”

Section: Introductionmentioning

confidence: 99%

Investigation and Evaluation of High-Temperature Encapsulation Materials for Power Module Applications

Lyon,

DiMarino

2023

IMAPSource Proceedings

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With the advent of ultra-wide bandgap (UWBG) semiconductor materials, such as Gallium Oxide (Ga2O3) and Aluminum Nitride (AlN), higher temperature and higher voltage operation of power devices is becoming realizable. However, conventional polymeric and organic encapsulant materials are typically limited to operating temperatures of 200 °C and below. In this work, six materials were identified and evaluated as candidates for use as encapsulants for operation and high-voltage insulation at and above 250 °C. High-temperature silicone gel was used as a reference material and was compared to five novel encapsulants including an epoxy resin, a hydro-set cement, two low melting point glass compounds, and a ceramic potting compound. Gas pycnometry was utilized to evaluate the voiding concentration to avoid partial discharge. Each material was then processed onto a direct-bonded-aluminum (DBA) substrate test coupon to evaluate compatibility with a commonly used metal-ceramic substrate and processability for use in a power module. The insulation capability of each material was evaluated by testing the partial discharge inception voltage (PDIV) across a 1mm gap etched in the substrate. The dielectric stability was then tested by soaking the materials in air at 250 °C for various intervals and observing the degradation of their PDIVs and appearances. The results of each test were compared, and conclusions were drawn about each material’s feasibility for use as a dielectric encapsulation material for a power module operating at temperatures exceeding 200 °C.

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Section: Introductionmentioning

confidence: 99%

Investigation and Evaluation of High-Temperature Encapsulation Materials for Power Module Applications

Lyon,

DiMarino

2023

IMAPSource Proceedings

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show abstract

“…1, have been designed and optimized for use with silicon semiconductor devices which are limited to 150 C operation due to the intrinsic carrier concentration of Si. With the low intrinsic carrier concentration and ultrawide bandgap (UWBG) of new semiconductor materials, i.e., 1.79 3 10 223 cm 23 and 4.8 eV for Ga 2 O 3 , respectively, the promise of high-temperature and high-power operation is realizable [2][3][4].…”

Section: Introductionmentioning

confidence: 99%

Investigation and Evaluation of High-Temperature Encapsulation Materials for Power Module Applications

Lyon,

DiMarino

2023

Journal of Microelectronics and Electronic Packaging

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With the advent of ultra-wide bandgap semiconductor materials, such as gallium oxide (Ga2O3) and aluminum nitride (AlN), higher temperature and higher voltage operation of power devices are becoming realizable. However, conventional polymeric and organic encapsulant materials are typically limited to operating temperatures of 200 degrees C and below. In this work, six materials were identified and evaluated as candidates for use as encapsulants for operation and high-voltage insulation at and above 250 degrees C. High-temperature silicone gel was used as a reference material and was compared with five novel encapsulants including an epoxy resin, a hydro-set cement, two low-melting point glass compounds, and a ceramic potting compound. Gas pycnometry was utilized to evaluate the voiding concentration to avoid partial discharge. Each material was then processed onto a direct-bonded-aluminum substrate test coupon to evaluate compatibility with a commonly used metal-ceramic substrate and processability for use in a power module. The insulation capability of each material was evaluated by testing the partial discharge inception voltage (PDIV) across a 1-mm gap etched in the substrate. The dielectric stability was then tested by soaking the materials in air at 250 degrees C for various intervals and observing the degradation of their PDIVs and appearances. The results of each test were compared, and conclusions were drawn about each material’s feasibility for use as a dielectric encapsulation material for a power module operating at temperatures exceeding 200 degrees C.

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PtOx Schottky Contacts on Degenerately Doped $$\left( {\overline{2}01} \right)$$ β-Ga2O3 Substrates

Spencer,

Jacobs,

Hobart

et al. 2024

J. Electron. Mater.

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Electrothermal Modeling and Analysis of Gallium Oxide Power Switching Devices

Cited by 5 publications

References 8 publications

Investigation and Evaluation of High-Temperature Encapsulation Materials for Power Module Applications

Investigation and Evaluation of High-Temperature Encapsulation Materials for Power Module Applications

Investigation and Evaluation of High-Temperature Encapsulation Materials for Power Module Applications

PtOx Schottky Contacts on Degenerately Doped $$\left( {\overline{2}01} \right)$$ β-Ga2O3 Substrates

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