Electrothermal Characterization for Reliability of Modern Low-Voltage PowerMOSFETs

Castellazzi, Alberto; Ciappa, Mauro

doi:10.1109/tdmr.2007.910439

Cited by 7 publications

(1 citation statement)

References 14 publications

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“…18, for example) [3]. If VGS is varied in real time with a sense on the drain current, the current and power dissipation can be controlled to a constant value for some time before the onset of instability [10,11]. The ability of the device to safely withstand operation in this regime needs thorough analysis of T and of its transient evolution during the current limiting event.…”

Section: Current Limiting and Regulation Capabilitymentioning

confidence: 99%

Transient out-of-SOA robustness of SiC power MOSFETs

Castellazzi

Fayyaz

Romano

et al. 2017

2017 IEEE International Reliability Physics Symposium (IRPS)

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Abstract-Beyond their main function of high-frequency switches in modulated power converters, solid-state power devices are required in many application domains to also ensure robustness against a number of overload operational conditions. This paper considers the specific case of 1200 V SiC power MOSFETs and analyses their performance under three main transient regimes at the edge of and out of their Safe Operating Area: unclamped inductive switching led avalanche breakdown; short-circuit; operation as current limiting and regulating devices. The results presented highlight both inherent major strengths of SiC over Si and areas for improvement by tailored device design. The paper aims to contribute useful indications for technology development in future device generations to better match widespread and varied application requirements.

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Section: Current Limiting and Regulation Capabilitymentioning

confidence: 99%