Electrosynthesis of bismuth nanodendrites/gallium nitride electrode for non-enzymatic hydrogen peroxide detection

Jiang, Qiu‐Xing; Zhang, Miaorong; Luo, Liqiang; Pan, Ge‐Bo

doi:10.1016/j.talanta.2017.04.075

Cited by 23 publications

(12 citation statements)

References 28 publications

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“…For comparison, electrochemical sensing performances of conventional nanomaterials and GaN-based materials toward H 2 O 2 are summarized in Table . ,,− ,,,− For conventional nanomaterials, the LOD of H 2 O 2 was normally in the range of 0.2–2 μM. As for the previously reported GaN-based materials, metal-catalyst decoration (such as Au and Bi) was required, and the corresponding LODs were only 2 μM and 5 μM, respectively. Thus, for our PGP, 4–40-fold and 40–100-fold improvements on LOD were realized compared with the reported conventional nanomaterials and metal-decorated GaN materials, respectively.…”

Section: Results and Disscussionmentioning

confidence: 99%

“…7−11 These GaN materials were grown at high temperature (normally at ∼1000 °C for MOCVD) for high crystallinity, which would lead to inefficient catalytic activity due to the inert surface, and their LOD toward H 2 O 2 was relatively high even with metal-catalyst decoration (2−5 μM). 10,11 knowledge, there is still no report on improving the catalytic activity of intrinsic GaN materials.…”

Section: Introductionmentioning

confidence: 99%

“…); − and (3) for growth of GaN materials, metal organic chemical vapor deposition (MOCVD) is the most widely used technique, which can provide high crystal quality and precise control of growth rate and material composition at the atomic level . However, for applications in electrochemical sensors, GaN materials still severely suffer from poor catalytic activity. − …”

Section: Introductionmentioning

confidence: 99%

“…Currently, the research on GaN electrochemical sensor mainly focused on the increase of specific surface area (i.e., fabricating GaN porous film) rather than the catalytic activity of GaN materials. − These GaN materials were grown at high temperature (normally at ∼1000 °C for MOCVD) for high crystallinity, which would lead to inefficient catalytic activity due to the inert surface, and their LOD toward H 2 O 2 was relatively high even with metal-catalyst decoration (2–5 μM). , To our knowledge, there is still no report on improving the catalytic activity of intrinsic GaN materials.…”

Section: Introductionmentioning

confidence: 99%

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Direct Growth of Polycrystalline GaN Porous Layer with Rich Nitrogen Vacancies: Application to Catalyst-Free Electrochemical Detection

Chen

Huang

Zhao

et al. 2020

ACS Appl. Mater. Interfaces

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It has been demonstrated that defect engineering is an effective strategy to enhance the activity of materials. Herein, a polycrystalline GaN porous layer (PGP) with high catalytic activity was grown by self-assembly on GaN-coated sapphire substrate by using low-temperature (LT) MOCVD growth. Without doping, LT growth can significantly improve the activity and electrical conductivity of PGP, owing to the presence of rich N-vacancies (∼1020 cm–3). Identification of rich N-vacancies in the PGP material was realized by using atomically resolved STEM (AR-STEM) characterization. The optimized PGP was applied to catalyst-free electrochemical detection of H2O2 with a limit of detection (LOD) of 50 nM, a fast response speed of 3 s, a wide linear detection range (50 nM to 12 mM), and a high stability. The LOD is exceeding 40 fold lower than that of reported metal-catalyst decorated GaN. Moreover, a quantitative relationship between the sensing performances and N-vacancy of PGP was established. To our knowledge, it is the first time that intrinsic GaN materials can exhibit high catalytic activity.

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Section: Results and Disscussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Direct Growth of Polycrystalline GaN Porous Layer with Rich Nitrogen Vacancies: Application to Catalyst-Free Electrochemical Detection

Chen

Huang

Zhao

et al. 2020

ACS Appl. Mater. Interfaces

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“…Compared with planar GaN, PGaN provides higher surface area and more defects. The correlation research indicated that it can be applied in some fields as an excellent electrode [19,20,21].…”

Section: Introductionmentioning

confidence: 99%

Electrodeposition of Pd-Pt Nanocomposites on Porous GaN for Electrochemical Nitrite Sensing

Rui

Zhang

et al. 2019

Sensors

Self Cite

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In recent years, nitrite pollution has become a subject of great concern for human lives, involving a number of fields, such as environment, food industry and biological process. However, the effective detection of nitrite is an instant demand as well as an unprecedented challenge. Here, a novel nitrite sensor was fabricated by electrochemical deposition of palladium and platinum (Pd-Pt) nanocomposites on porous gallium nitride (PGaN). The obtained Pd-Pt/PGaN sensor provides abundant electrocatalytic sites, endowing it with excellent performances for nitrite detection. The sensor also shows a low detection limit of 0.95 µM, superior linear ampere response and high sensitivity (150 µA/mM for 1 to 300 µM and 73 µA/mM for 300 to 3000 µM) for nitrite. In addition, the Pd-Pt/PGaN sensor was applied and evaluated in the determination of nitrite from the real environmental samples. The experimental results demonstrate that the sensor has good reproducibility and long-term stability. It provides a practical way for rapidly and effectively monitoring nitrite content in the practical application.

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High‐Mass‐Loading CoNi‐Layered Double Hydroxide Directly Grown on Brush‐like Cu/Carbon Cloth as High‐Areal‐Capacitance Supercapacitor Electrode

Zhou

Feng

Fang

et al. 2023

Batteries & Supercaps

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A combination of high mass loading and efficient utilization of electroactive materials is crucial for simultaneously enhancing the energy and power densities of energy storage devices. This is exemplified herein using cobalt nickel layered double hydroxides nanosheets (CoNi‐LDHs) directly grown on copper nanowires (Cu NWs) standing quasi‐vertically on carbon cloth (CC) to yield a multi‐core‐shell CoNi‐LDHs/Cu NWs/CC as the supercapacitor electrode that exhibits a high areal capacitance of 5.55 F cm−2 (corresponding to a gravimetric capacitance of 1209.15 F g−1) at a large current density of 10 mA cm−2. Such superior rate capability is attributed to the high packing density of CoNi‐LDHs in the electrode, benefitting from the large specific surface area of Cu NWs/CC. Additional contribution stems, on the other hand, from the facile charge transfer kinetics resulted from the elimination of binder from the electrode coupled with the mesopores between not only Cu NWs but also CoNi‐LDHs nanosheets, and the macropores between the carbon fiber of CC. Benefitting from such exceptional rate performance is the supercapacitor built on CoNi‐LDHs/Cu NWs/CC as the positive electrode coupled with bismuth subcarbonate (Bi2O2CO3) as the negative electrode capable of delivering outstanding power density of 13.31 mW cm−2 and energy density of 0.35 mWh cm−2.

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Electrosynthesis of bismuth nanodendrites/gallium nitride electrode for non-enzymatic hydrogen peroxide detection

Cited by 23 publications

References 28 publications

Direct Growth of Polycrystalline GaN Porous Layer with Rich Nitrogen Vacancies: Application to Catalyst-Free Electrochemical Detection

Direct Growth of Polycrystalline GaN Porous Layer with Rich Nitrogen Vacancies: Application to Catalyst-Free Electrochemical Detection

Electrodeposition of Pd-Pt Nanocomposites on Porous GaN for Electrochemical Nitrite Sensing

High‐Mass‐Loading CoNi‐Layered Double Hydroxide Directly Grown on Brush‐like Cu/Carbon Cloth as High‐Areal‐Capacitance Supercapacitor Electrode

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