Electrostriction measurements on low permittivity dielectric materials

Yimnirun, Rattikorn; Eury, Sylvie; Sundar, V.; Moses, Paul; Jang, S. J.; Newnham, R. E.

doi:10.1016/s0955-2219(98)00418-x

Cited by 20 publications

(14 citation statements)

References 5 publications

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“…Besides, several research groups have experimentally observed that the intrinsic electrostrictive coefficient Q defined in Eq. (1) is inversely proportional to the product of the Young modulus and dielectric permittivity [12][13][14]…”

Section: S Q Pmentioning

confidence: 99%

Improvement of electrostrictive properties of a polyether-based polyurethane elastomer filled with conductive carbon black

Wongtimnoi

Guiffard

Moortele

et al. 2011

Composites Science and Technology

102

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International audienceThe electrostrictive properties of a polyether-based polyurethane elastomer and its corresponding composites filled with conductive carbon black (CB) were studied by measuring the thickness strain SZ induced by external electric fields E. For films with thicknesses of approximately 50 μm, the apparent electrostrictive coefficient M was measured at low electric fields, E ⩽ 4 V/μm, and different CB contents (up to a volume fraction of 2%). Dielectric measurements in AC mode were performed in order to determine the percolation threshold fc, which was 1.25 v%. This optimal volume fraction yielded a remarkable threefold increase in M, associated with an increase of the dielectric constant by a factor 7, in comparison with pure PU. This enhancement of the electric field-induced strain and apparent electrostriction was mainly triggered by an increase of the dielectric constant, even if the intrinsic electrostriction coefficient Q was decreased. The nanocomposites thus seem to be very attractive for low-frequency electromechanical applications. Above fc, their conductivity was raised and their electrostrictive activity lost. Finally, there is a good agreement between the experimentally determined dependence on the CB content of the M coefficient and the theoretical estimation calculated from dielectric and mechanical measurements

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Section: S Q Pmentioning

confidence: 99%

Improvement of electrostrictive properties of a polyether-based polyurethane elastomer filled with conductive carbon black

Wongtimnoi

Guiffard

Moortele

et al. 2011

Composites Science and Technology

102

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“…Such behaviour had previously been observed by Scott (1999) in ferroelectric thin films such as SrTiO 3 . In RTA, the actual bending of the planes was produced by an electrostrictive strain, ij , defined by a fourth rank tensor, ijkl , and the quadratic coupling of the strain to the electric field, E k E l (Yimnirun et al, 1999):…”

Section: Introductionmentioning

confidence: 99%

In situinvestigation of the non-linear optical crystal rubidium titanyl arsenate, RbTiOAsO₄, under applied electric field using X-ray imaging

et al. 2007

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Recent work on the non‐linear optical single‐crystal rubidium titanyl arsenate (RbTiOAsO4, RTA) has shown that it exhibits behaviour consistent with a ferroelectric semiconductor under large applied electric fields, with the development of a non‐uniform field in the near‐surface region. To confirm aspects of the proposed model, the behaviour of 001 slices of initially single‐domain RTA, patterned with periodic Ag electrodes of spacing 38 µm, as for periodic poling in non‐linear optics, were investigated using synchrotron X‐ray section topography with the electric field applied in situ while under X‐ray illumination at the ID19 topography beamline of the ESRF, Grenoble. The results of white‐beam section topography as both a function of crystal to film distance, and under DC voltage are reported, confirming that there is a bending of the planes in the near‐surface region. The strain in the near‐surface region was examined directly using high‐resolution monochromatic X‐ray section topography. This revealed an extensive strain of 3 (±1) × 10−4 at 1 kV, indicating that the electrostrictive coefficient, γ3333, in RTA is positive in sign.

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“…The electrostriction strain coefficient, measured in both thin films and ceramics at room temperature, is at least 2 orders of magnitude higher 9 , 15 , 18 − 27 than expected from the empirical scaling law proposed by Newnham and co-workers. 28 , 29 …”

Section: Introductionmentioning

confidence: 99%

Trivalent Dopant Size Influences Electrostrictive Strain in Ceria Solid Solutions

Varenik

Nino

Wachtel

et al. 2021

ACS Appl. Mater. Interfaces

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The technologically important frequency range for the application of electrostrictors and piezoelectrics is tens of Hz to tens of kHz. Sm 3+ - and Gd 3+ -doped ceria ceramics, excellent intermediate-temperature ion conductors, have been shown to exhibit very large electrostriction below 1 Hz. Why this is so is still not understood. While optimal design of ceria-based devices requires an in-depth understanding of their mechanical and electromechanical properties, systematic investigation of the influence of dopant size on frequency response is lacking. In this report, the mechanical and electromechanical properties of dense ceria ceramics doped with trivalent lanthanides (RE 0.1 Ce 0.9 O 1.95 , RE = Lu, Yb, Er, Gd, Sm, and Nd) were investigated. Young’s, shear, and bulk moduli were obtained from ultrasound pulse echo measurements. Nanoindentation measurements revealed room-temperature creep in all samples as well as the dependence of Young’s modulus on the unloading rate. Both are evidence for viscoelastic behavior, in this case anelasticity. For all samples, within the frequency range f = 0.15–150 Hz and electric field E ≤ 0.7 MV/m, the longitudinal electrostriction strain coefficient (| M 33 |) was 10 2 to 10 4 -fold larger than expected for classical (Newnham) electrostrictors. However, electrostrictive strain in Er-, Gd-, Sm-, and Nd-doped ceramics exhibited marked frequency relaxation, with the Debye-type characteristic relaxation time τ ≤ 1 s, while for the smallest dopants—Lu and Yb—little change in electrostrictive strain was detected over the complete frequency range studied. We find that only the small, less-studied dopants continue to produce useable electrostrictive strain at the higher frequencies. We suggest that this striking difference in frequency response may be explained by postulating that introduction of a dopant induces two types of polarizable elastic dipoles and that the dopant size determines which of the two will be dominant.

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Electrostriction measurements on low permittivity dielectric materials

Cited by 20 publications

References 5 publications

Improvement of electrostrictive properties of a polyether-based polyurethane elastomer filled with conductive carbon black

Improvement of electrostrictive properties of a polyether-based polyurethane elastomer filled with conductive carbon black

In situinvestigation of the non-linear optical crystal rubidium titanyl arsenate, RbTiOAsO₄, under applied electric field using X-ray imaging

Trivalent Dopant Size Influences Electrostrictive Strain in Ceria Solid Solutions

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Electrostriction measurements on low permittivity dielectric materials

Cited by 20 publications

References 5 publications

Improvement of electrostrictive properties of a polyether-based polyurethane elastomer filled with conductive carbon black

Improvement of electrostrictive properties of a polyether-based polyurethane elastomer filled with conductive carbon black

In situinvestigation of the non-linear optical crystal rubidium titanyl arsenate, RbTiOAsO4, under applied electric field using X-ray imaging

Trivalent Dopant Size Influences Electrostrictive Strain in Ceria Solid Solutions

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Product

Resources

About

In situinvestigation of the non-linear optical crystal rubidium titanyl arsenate, RbTiOAsO₄, under applied electric field using X-ray imaging