Electrostatic modulation of the electronic properties of Nb-doped SrTiO3 superconducting films

Takahashi, Kei; Matthey, Daniel; Jaccard, D.; Triscone, Jean‐Marc; Shibuya, Keisuke; Ohnishi, T.; Lippmaa, Mikk

doi:10.1063/1.1667279

Cited by 39 publications

(27 citation statements)

References 26 publications

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“…Remarkably, the field effect proves efficient for a wide range of carrier density, from the undoped 31 to the metallic state (n ≈ 10 18 cm −3 ) 30 and even in the low-temperature superconducting phase 32 . If the field effect can modify the spin-diffusion length (in addition to the carrier density), or enables the tuning of spin-flip mechanisms (in analogy to the principle of the Datta and Das transistor 33 ), full oxide spin-FET using STO channels and Co-LSTO as spin injector and detector could be built in the near future.…”

Section: Perspectivesmentioning

confidence: 99%

Full oxide heterostructure combining a high-TCdiluted ferromagnet with a high-mobility conductor

et al. 2006

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We report on the growth of heterostructures composed of layers of the high-Curie temperature ferromagnet Co-doped (La,Sr)TiO3 (Co-LSTO) with high-mobility SrTiO3 (STO) substrates processed at low oxygen pressure. While perpendicular spin-dependent transport measurements in STO//Co-LSTO/LAO/Co tunnel junctions demonstrate the existence of a large spin polarization in Co-LSTO, planar magnetotransport experiments on STO//Co-LSTO samples evidence electronic mobilities as high as ∼ 10 4 cm 2 /Vs at T = 10 K. At high enough applied fields and low enough temperatures (µH ≥ 6 Teslas, T ≤ 4 K) Shubnikov-de Haas oscillations are also observed. We present an extensive analysis of these quantum oscillations and relate them with the electronic properties of STO, for which we find large scattering rates up to ≈ 10 −11 s. Thus, this work opens up the possibility to inject a spin-polarized current from a high-Curie temperature diluted oxide into an isostructural system with high-mobility and a large spin diffusion length.

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Section: Perspectivesmentioning

confidence: 99%

Full oxide heterostructure combining a high-TCdiluted ferromagnet with a high-mobility conductor

et al. 2006

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“…3,4 Carrier density tuning has been done in cuprate and titanate films by using ferroelectric field-effect devices, which resulted in a shift of the superconducting critical temperature. 5,6 These works have generated a great deal of interest from the viewpoint of phase tuning in correlated electron systems, where physical properties depend strongly on the carrier density. 7 However, in these systems, the number of carriers injected by field-effect is always much smaller than the number of chemically doped carriers and therefore the effects of field-effect doping are not clearly revealed.…”

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confidence: 99%

Field-effect modulation of the transport properties of nondoped SrTiO3

Shibuya

Ohnishi

Uozumi

et al. 2006

Applied Physics Letters

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We have fabricated SrTiO3 (100) single crystal field-effect transistors with amorphous and epitaxial CaHfO3 gate insulator layers. The devices with amorphous insulator layers showed nearly temperature independent behavior. The transistors with epitaxial interfaces exhibited a large improvement over the amorphous devices. The field-effect mobility was found to increase at low temperature, reaching 35cm2∕Vs at 50K. This result shows that the carriers accumulated by the field effect on the SrTiO3 side of the gate interface behaved as would be expected for electron-doped SrTiO3. An insulator-metal transition, induced by field-effect doping, was observed in epitaxial SrTiO3-based transistors.

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“…3(b). The poling-induced relative change in the volume carrier density ( n/n) can be calculated using n/n = P/edn [24,45], where n and d are the volume carrier density and thickness of the NNO film, P is the polarization of the PIN-PMN-PT substrate, and e is the unit charge (1.602 × 10 −19 C). Using P∼25 µC/cm 2 at E = 10 kV/cm, d ∼ 25 nm [ Fig.…”

Section: A Nno/pin-pmn-pt(001)mentioning

confidence: 99%

Manipulation of the Electronic Transport Properties of Charge-Transfer Oxide Thin Films of NdNiO3 Using Static and Electric-Field-Controllable Dynamic Lattice Strain

Yan

Chen

et al. 2019

Phys. Rev. Applied

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Using perovskite-type charge-transfer oxide thin films of NdNiO3 (NNO) as a model system, we demonstrate that the effects of lattice strain on the electronic transport properties can be more comprehensively understood by growing NNO films on a number of (001)-, (011)-, and (111)-cut singlecrystal substrates with different lattice mismatches including the relaxor-based 0.31Pb(In1/2Nb1/ 2)O3-0.35Pb(Mg1/3Nb2/3)O3-0.34PbTiO3 (PIN-PMN-PT) and 0.71Pb(Mg1/3Nb2/3)O3-0.29PbTiO3 (PMN-PT) ferroelectric (FE) single crystals. In addition to the static lattice strains from conventional substrates (e.g., SrTiO3, LaAlO3), we in situ impose in-plane compressive or tensile strains to NNO films using FE/ferroelastic domain switching of FE substrates. An unprecedented electric-field-induced large out-of-plane compressive strain (-0.53%) and in-plane tensile strain (+0.81%) are achieved in the 25-nm NNO film by switching the polarization direction of the PIN-PMN-PT substrate at T = 200 K. This value is approximately 7.4 to 45 times larger than those previously reported in FE substrate-based heterostructures. As a result of the induced large lattice strain, the resistivity of the NNO film is modulated up to 125%. Further, taking advantage of the linear piezoelectric strain, a quantitative relationship between the resistivity and the in-plane strain of the NNO film is established, with a gauge fact of (Δρ/ ρ)/δϵxx∼40.8. Moreover, using the domain-engineered FE/ferroelastic switching of PMN-PT substrates, multiple stable resistance states with good retention and endurance properties can be obtained at room temperature and the metal-to-insulator transition temperature (T MI) of NNO films can be modified by precisely controlling the electric-field-pulse sequence as a result of the nonvolatile remnant strain transferring from the PMN-PT to the NNO film. Our results demonstrate that the electric-field-tunable ferroelastic/piezoelectric strain approach can be utilized to gain deeper insight into the intrinsic strainproperty relationship of perovskite nickelate films and provide a simple and energy efficient way to construct multistate resistive memories.

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Electrostatic modulation of the electronic properties of Nb-doped SrTiO3 superconducting films

Cited by 39 publications

References 26 publications

Full oxide heterostructure combining a high-TCdiluted ferromagnet with a high-mobility conductor

Full oxide heterostructure combining a high-TCdiluted ferromagnet with a high-mobility conductor

Field-effect modulation of the transport properties of nondoped SrTiO3

Manipulation of the Electronic Transport Properties of Charge-Transfer Oxide Thin Films of NdNiO3 Using Static and Electric-Field-Controllable Dynamic Lattice Strain

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