2013
DOI: 10.1103/physrevb.87.201304
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Electrostatic mechanism of strong enhancement of light emitted by semiconductor quantum wells

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Cited by 14 publications
(13 citation statements)
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“…These plasmonic NPs when excited with a source that is resonant in energy to the plasmon frequency of one species result in hot carrier generation, but if excited with a higher energy light source off-resonant to the LSP result in carrier density modulation in the semiconductor without dissipative loss. 32 We demonstrate that the hot-carrier electron transfer due to resonant pumping of AuNPs can change the frequency of emitted light in the GaAs/AlGaAs quantum well, while the PL intensity is amplified from the image charge effect induced by the GaNPs. We also establish that the angle of incidence and excitation power of the laser influence the coupling between the plasmonic metal nanoparticles and the substrate.…”
Section: Introductionmentioning
confidence: 84%
“…These plasmonic NPs when excited with a source that is resonant in energy to the plasmon frequency of one species result in hot carrier generation, but if excited with a higher energy light source off-resonant to the LSP result in carrier density modulation in the semiconductor without dissipative loss. 32 We demonstrate that the hot-carrier electron transfer due to resonant pumping of AuNPs can change the frequency of emitted light in the GaAs/AlGaAs quantum well, while the PL intensity is amplified from the image charge effect induced by the GaNPs. We also establish that the angle of incidence and excitation power of the laser influence the coupling between the plasmonic metal nanoparticles and the substrate.…”
Section: Introductionmentioning
confidence: 84%
“…At higher quantum efficiencies, no significant change occurs in the spontaneous emission process due to the localized plasmon-induced decay. Electrostatic-charge-induced PL enhancement also saturates at high carrier densities [16]. Thus, at the anthracene concentration of 2 × 10 −2 M, the hybrid emitter exhibited negligible enhancement at any PL emission energy, as noted in Fig.…”
mentioning
confidence: 88%
“…This blue shift is a signature of an increase in the total number of carriers influencing the PL emission process due to Coulomb attraction induced by electrostatic image charges [16]. The mechanism of carrier accumulation in organic molecules due to metal NPs is different from the drift-or diffusion-induced carrier transport in the case of inorganic semiconductors [16] and needs to be investigated further. An appreciable blue shift due to AgNPs is observed for anthracene concentrations that yields a large enhancement of the PL emission.…”
mentioning
confidence: 99%
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“…The latter effect can be obtained for a wider frequency range and can therefore be used to improve the efficiency of broadband light emitters, not limited at the LSPR wavelength. Llopis et al propose an electrostatic mechanism for carrier-metallic nanoparticle interactions, comparable in effect to plasmonic interactions [82]. Arising from the coulomb attraction of electrons and holes to their image charges in a metal produces large carrier concentrations near metallic nanoparticles.…”
Section: The Mechanism Of Enhanced Photoemission Efficiencymentioning
confidence: 98%