Abstract:Thermal processing or oxidation of 4H-SiC with n-type doping above about 3x10 19 cm -3 is known to produce double Shockley stacking faults spontaneously. The resulting region of 3C stacking order acts like a quantum well in the 4H matrix and becomes negatively charged due to modulation doping. Some of these quantum well regions penetrate into the lightly-doped epilayers and intersect the wafer surface as straight lines, due to the 8 o misorientation of the wafer from the c-axis. These intersections appear as b… Show more
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