Electrostatic clamping with an EUVL mask chuck: Particle issues

Kalkowski, G.; Zeuske, Jacob R.; Risse, Stefan; Müller, Sandra; Peschel, Thomas; Rohde, Mathias

doi:10.1016/j.mee.2011.01.063

Cited by 1 publication

(1 citation statement)

References 6 publications

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“…[1][2][3][4][5][6][7] Because EUV light is absorbed by many materials, EUV lithography replaces the traditional transmissive mask blank with a reflective mask blank. [1][2][3][4][5][6][7] Because EUV light is absorbed by many materials, EUV lithography replaces the traditional transmissive mask blank with a reflective mask blank.…”

Section: Introductionmentioning

confidence: 99%

Influence of shield roughness on Mo/Si defect density for extreme ultraviolet lithography mask blanks

Kageyama

Yoshimoto

Matsuda

et al. 2013

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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The authors investigated the influence of surface roughness of stainless-steel shields in an ion beam sputtering chamber on the particle defect density of deposited 50 pairs of Mo/Si bilayer films ([Mo/Si] 50 ) used in extreme ultraviolet mask blanks. Shields with varying arithmetic average surface roughness (Ra range approximately 3 to 20 lm) were mounted close to the sputtering targets and the substrate, and along the vacuum chamber interior wall. Silicon-rich particles (Si and Si/Mo) with diameters in the range of several tens of nanometers or more were quantified within a 142 mmÂ 142 mm area of the prepared blank film using a mask blank inspection tool. Si-rich particle defect density was found to be proportional to the inverse square of the shield surface roughness, suggesting that Si-rich particles arise from the shield surface. The shields with roughness exceeding 8 lm effectively suppressed the accumulation of Si-rich particle defects on the mask blank film.

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