Electrostatic chuck behaviour at ambient conditions

Kalkowski, G.; Risse, Stefan; Guyenot, Volker

doi:10.1016/s0167-9317(02)00501-4

Cited by 10 publications

(5 citation statements)

References 2 publications

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“…(4) Electrostatic Chuck. The only known way to clamp a wafer to a very flat reference plane inside the UHV TXRF analysis chamber and to move the whole assembly into a vertical orientation without touching any point of the wafer surface is to use an ESC . The bipolar ESC employed was developed by the Fraunhofer Institut für Angewandte Optik und Feinmechanik (IOF).…”

mentioning

confidence: 99%

Reference-Free Total Reflection X-ray Fluorescence Analysis of Semiconductor Surfaces with Synchrotron Radiation

et al. 2007

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Total reflection X-ray fluorescence (TXRF) analysis is a well-established method to monitor lowest level contamination on semiconductor surfaces. Even light elements on a wafer surface can be excited effectively when using high-flux synchrotron radiation in the soft X-ray range. To meet current industrial requirements in nondestructive semiconductor analysis, the Physikalisch-Technische Bundesanstalt (PTB) operates dedicated instrumentation for analyzing light element contamination on wafer pieces as well as on 200- and 300-mm silicon wafer surfaces. This instrumentation is also suited for grazing incidence X-ray fluorescence analysis and conventional energy-dispersive X-ray fluorescence analysis of buried and surface nanolayered structures, respectively. The most prominent features are a high-vacuum load-lock combined with an equipment front end module and a UHV irradiation chamber with an electrostatic chuck mounted on an eight-axis manipulator. Here, the entire surface of a 200- or a 300-mm wafer can be scanned by monochromatized radiation provided by the plane grating monochromator beamline for undulator radiation in the PTB laboratory at the electron storage ring BESSY II. This beamline provides high spectral purity and high photon flux in the range of 0.078-1.86 keV. In addition, absolutely calibrated photodiodes and Si(Li) detectors are used to monitor the exciting radiant power respectively the fluorescence radiation. Furthermore, the footprint of the excitation radiation at the wafer surface is well-known due to beam profile recordings by a CCD during special operation conditions at BESSY II that allow for drastically reduced electron beam currents. Thus, all the requirements of completely reference-free quantitation of TXRF analysis are fulfilled and are to be presented in the present work. The perspectives to arrange for reference-free quantitation using X-ray tube-based, table-top TXRF analysis are also addressed.

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mentioning

confidence: 99%

Reference-Free Total Reflection X-ray Fluorescence Analysis of Semiconductor Surfaces with Synchrotron Radiation

et al. 2007

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“…As shown in Figure 8c, MIN was mainly of type 1 ⃝, and the porosity was 1.80%. Figure 8b MED was dominated by 1 ⃝ and 2 ⃝ types, with a porosity of 3.27%, and the porosity was mainly affected by the interaction between the current and the spraying distance, and, when the current was small and the spraying distance was large, the difference in the thermal expansion coefficient between the coatings caused the cooling stress to increase, which was closely related to the difference in the thermal expansion coefficient and the residual stress of the coatings [28]. Stress increased the generation and propagation of microcracks in the coating, which increased the porosity to a certain extent.…”

Section: Analysis Of Pore Typesmentioning

confidence: 92%

“…This suggests that a reduction in porosity enhances the overall integrity and adhesion of the coating. With the change of APS process parameters, the pore size and crack direction were classified in this study, and the pore diameter below 10 µm was regarded as type 1 ⃝, the pore diameter of 10-25 µm was regarded as type 2 ⃝, and the pore diameter was more than 25 µm as type 3 ⃝. As shown in Figure 8c, MIN was mainly of type 1 ⃝, and the porosity was 1.80%.…”

Section: Analysis Of Pore Typesmentioning

confidence: 93%

“…With the change of APS process parameters, the pore size and crack direction were classified in this study, and the pore diameter below 10 µm was regarded as type 1 ⃝, the pore diameter of 10-25 µm was regarded as type 2 ⃝, and the pore diameter was more than 25 µm as type 3 ⃝. As shown in Figure 8c, MIN was mainly of type 1 ⃝, and the porosity was 1.80%. Figure 8b MED was dominated by 1 ⃝ and 2 ⃝ types, with a porosity of 3.27%, and the porosity was mainly affected by the interaction between the current and the spraying distance, and, when the current was small and the spraying distance was large, the difference in the thermal expansion coefficient between the coatings caused the cooling stress to increase, which was closely related to the difference in the thermal expansion coefficient and the residual stress of the coatings [28].…”

Section: Analysis Of Pore Typesmentioning

confidence: 93%

“…Ultra-high voltage transmission and transformation equipment is usually built in natural environments that are susceptible to corrosion and electrochemical attack. By adding a ceramic protective coating to the equipment, the corrosion resistance, insulation, and service life of the equipment can be greatly improved while ensuring economic benefits [1,2]. Ceramic materials such as Al 2 O 3 , Si 3 N 4 , and Y 2 O 3 are often used in the preparation of insulating coatings due to their good dielectric properties and corrosion resistance.…”

Section: Introductionmentioning

confidence: 99%

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Study on the Microstructure, Corrosion Resistance and Dielectric Properties of Atmospheric Plasma-Sprayed Y2O3 Ceramic Coatings

Sun,

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Qiu

et al. 2024

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Atmospheric plasma spraying (APS) is one of the most efficient processes for the preparation of yttrium oxide (Y2O3) ceramic coatings. Changing the spraying process parameters can significantly improve the microstructure and enhance the coating properties. In this study, the combination of plasma-spraying process parameters (current, spraying distance, and argon (Ar) flow) was varied by Response Surface Methodology (RSM) with the help of Minitab 19 software. Applied to the design of experiments, improvement of errors, and prediction of microstructure property results, the optimization and validation of experimental parameters for attaining the desired microstructure of Y2O3 coatings, especially porosity, was achieved. Process parameters were optimized by RSM: current 613.64 A, Ar flow rate 46.92 L/min, spray distance 15.38 cm, and optimum porosity 1.8% after optimization. Electrochemical corrosion experiments and breakdown voltage experiments revealed that the corrosion resistance and dielectric properties increased significantly as the porosity of the coatings decreased. Therefore, by optimizing the plasma-spraying process parameters, the porosity of the coatings can be significantly reduced and the corrosion resistance and dielectric properties of Y2O3 coatings can be effectively improved.

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Effects of Samarium Oxide and graphene addition on the properties of AlN ceramics produced via spark plasma sintering

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Wang,

Yin

et al. 2024

Ceramics International

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Electrostatic chuck behaviour at ambient conditions

Cited by 10 publications

References 2 publications

Reference-Free Total Reflection X-ray Fluorescence Analysis of Semiconductor Surfaces with Synchrotron Radiation

Reference-Free Total Reflection X-ray Fluorescence Analysis of Semiconductor Surfaces with Synchrotron Radiation

Study on the Microstructure, Corrosion Resistance and Dielectric Properties of Atmospheric Plasma-Sprayed Y2O3 Ceramic Coatings

Effects of Samarium Oxide and graphene addition on the properties of AlN ceramics produced via spark plasma sintering

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