Electrostatic characterization and threshold voltage modeling of inversion type InGaAs gate-all-around MOSFET

Rahman, I. K. M. Reaz; Khan, Md. Irfan; Khosru, Quazi D. M.

doi:10.1007/s10825-021-01716-5

Cited by 2 publications

(1 citation statement)

References 32 publications

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“…Furthermore, DFT calculations have shed light on various other intriguing properties of LaAlO3, such as its magnetic behavior, optical response, and mechanical properties. These studies have not only deepened our fundamental understanding of LaAlO 3 but have also paved the way for its potential applications in fields like catalysis, energy storage, and optoelectronics [4]. Woodward and Lufaso analysis shows how cubic ABX 3 perovskites such as LaGaO 3 and LaAlO 3 can go into phase transition when subjected to some limits of external pressure [5].…”

Section: Introductionmentioning

confidence: 99%

Comparative Investigation of Pressure Effect on Structural Stability, Electronic and Optical Response of LaXO3 (X = Al, In, Ga) for Optoelectronic Applications

Moin,

Anwar,

Babar

et al. 2024

WJAP

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A first principle study intense on the density functional theory with Heydscuseria-Ernzerhof screened hybrid functional hybrid function (HSEO6) is used to assess the structural, Electronic, elastic, mechanical and optical responses of LaXO3 (X = Al, In, Ga) perovskite materials. The compressive investigation under the external static isotropic pressure (P= 0 to 80GaP), phase stability, band structure and their important impact on the optical response of LaAlO3, LaInO3 and LaGaO3. Electronic band structure shows that LaXO3 (X = Al, In Ga) semiconductor with indirect band gap and an optically inactive response up to 20GPa, while the band gap becomes direct at 80GaP. There are gamma points (G-X-Q) at 80GPa and the band gap changes from indirect to direct nature. Under main desperation physical parameters of perovskite materials are well explained the response of TDOS, PDOS and EPDOS contour plots have been well understood for the full description of the band gap. It is further observed that the external pressure enhanced upto 40GPa both materials are significantly more mechanically stable compared to pristine LaXO3 (X = Al, In, Ga) at 0GPa. The optical properties of LaAlO3, LaGaO3 and LaInO3, dielectric coefficient (ε1, iε2) have been employed along with the optical responses like absorption, energy loss function, reflectivity and reflective index are obtained in the energy scale from 0 to 60 eV. It was observed that static dielectric constant decreases with the decrease in optical band gap. The optical tunings under the effect of pressure which are good candidates in practical optoelectronic applications are extensively used and interpreted by the calculation of the dielectric function.

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Section: Introductionmentioning

confidence: 99%

Comparative Investigation of Pressure Effect on Structural Stability, Electronic and Optical Response of LaXO3 (X = Al, In, Ga) for Optoelectronic Applications

Moin,

Anwar,

Babar

et al. 2024

WJAP

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Doping induced threshold voltage and I_ON/I_OFF ratio modulation in surrounding gate MOSFET for analog applications

Das

Kanaujia

Deswal³

et al. 2022

2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON)

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Electrostatic characterization and threshold voltage modeling of inversion type InGaAs gate-all-around MOSFET

Cited by 2 publications

References 32 publications

Comparative Investigation of Pressure Effect on Structural Stability, Electronic and Optical Response of LaXO<sub>3</sub> (X = Al, In, Ga) for Optoelectronic Applications

Comparative Investigation of Pressure Effect on Structural Stability, Electronic and Optical Response of LaXO<sub>3</sub> (X = Al, In, Ga) for Optoelectronic Applications

Doping induced threshold voltage and I_ON/I_OFF ratio modulation in surrounding gate MOSFET for analog applications

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Electrostatic characterization and threshold voltage modeling of inversion type InGaAs gate-all-around MOSFET

Cited by 2 publications

References 32 publications

Comparative Investigation of Pressure Effect on Structural Stability, Electronic and Optical Response of LaXO&lt;sub&gt;3&lt;/sub&gt; (X = Al, In, Ga) for Optoelectronic Applications

Comparative Investigation of Pressure Effect on Structural Stability, Electronic and Optical Response of LaXO&lt;sub&gt;3&lt;/sub&gt; (X = Al, In, Ga) for Optoelectronic Applications

Doping induced threshold voltage and ION/IOFF ratio modulation in surrounding gate MOSFET for analog applications

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Comparative Investigation of Pressure Effect on Structural Stability, Electronic and Optical Response of LaXO<sub>3</sub> (X = Al, In, Ga) for Optoelectronic Applications

Comparative Investigation of Pressure Effect on Structural Stability, Electronic and Optical Response of LaXO<sub>3</sub> (X = Al, In, Ga) for Optoelectronic Applications

Doping induced threshold voltage and I_ON/I_OFF ratio modulation in surrounding gate MOSFET for analog applications