Electrospun Stacked Dual‐Channel Transistors with High Electron Mobility Using a Planar Heterojunction Architecture

Abstract

Thin‐film transistors based on metal oxide semiconductors have become a mainstream technology for application in driving low‐cost backplanes of active matrix liquid crystal displays. Although significant progress has been made in traditional marketable devices based on physical vapor deposition derived metal oxides, it has still been hindered by low yield and poor compatibility. Fortunately, developing solution‐based 1D nanofiber networks to act as the fundamental building blocks for transistor has proven to be a simpler, higher‐throughput approach. However, oxide transistors based on such princesses suffer from degraded carrier mobility and operational instability, preventing the ability of such devices from replacing present polycrystalline Si technologies. Herein, it is shown that double channel heterojunction transistors with high electron mobility (>40 cm2 V−1 s−1) and operational stability can be achieved from electrospun double channels composed of In2O3 and ZnO layers. Adjusting the stacking order and the stacking density of In2O3 and ZnO layers can effectively optimize the interface electron trap, leading to the formation of 2D electron gas and the reduction of stress‐induced instability. These findings further elucidate the significant advance of electrospinning‐derived double channel heterojunction transistors toward practical applications for future low‐cost and high‐performance electronics.

Electrospun Coaxial Nanowire‐Based FETs with Annular Heterogeneous Interface Gain for Intelligent Functional Electronics

“…In our previous investigation, we have demonstrated that network modes stacked by In 2 O 3 and ZnO NWs allow the formation of a 2DEG localized at the contact point, providing a gain for electron transport. [ 21 ] Assuming that the two layers of materials in the coaxial structure are bounded in specific regions, and the electrons on the ZnO layer are expected to migrate toward In 2 O 3 and fall into the potential well due to the remapping of the conduction band. Figure S4 (Supporting Information) depicts the energy band diagram of the In 2 O 3 /ZnO heterojunction (HJ) interface.…”

“…For constructing devices on Al 2 O 3 gate insulating layers the process was consistent with the above and a detailed procedure for the preparation of Al 2 O 3 by atomic layer deposition (ALD) can be found on the previous work. [21] NWs Characterization: The morphology and orientation distribution of NWs were observed using optical microscopy and SEM (REGULUS 8230). The microstructure, elemental components, and crystal phase composition of NWs were examined by XRD (SmartLab 9 kW) and TEM (JEM-2100).…”

“…For constructing devices on Al 2 O 3 gate insulating layers the process was consistent with the above and a detailed procedure for the preparation of Al 2 O 3 by atomic layer deposition (ALD) can be found on the previous work. [ 21 ]…”

Electrospun Highly Aligned IGZO Nanofiber Arrays with Low‐Thermal‐Budget for Challenging Transistor and Integrated Electronics

“…[ 6 ] Recently, the buzz about 1D MOS nanofibers (NFs) or NWs as active materials for FETs has also continued. [ 8–12 ] For instance, Wang et al. successfully demonstrated the integration of IGZO‐based NFNs in multifunctional flexible stretchable electronic FETs, confirming the potential value of inorganic 1D IGZO NFs in electronic devices.…”