Electroreflectance study of a symmetrically coupled GaAs/Ga0.77Al0.23As double quantum well system

Huang, Y. S.; Qiang, Hao; Pollak, Fred H.; Lee, Johnson; Elman, B.

doi:10.1063/1.349184

Cited by 35 publications

(13 citation statements)

References 18 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Upon further increase of the reverse bias voltage, the ER exhibits a change of phase between -4 and -5 V. This phase change can be understood as follows. It has been shown that for an excitonic transition from a QW, the ER signal is related to the first derivatives of the transition energy and the oscillator strength with respect to the modulating electric field [13]. At the flat-QW condition, the highest transition energy is expected.…”

Section: Resultsmentioning

confidence: 98%

Polarization field crossover in semi‐polar InGaN/GaN single quantum wells

Shen

Garrett

Wraback

et al. 2010

Phys. Status Solidi (c)

View full text Add to dashboard Cite

We present an electroreflectance study of the polarization field in semi‐polar (10$ \bar 1\bar 1 $) and (11$ \bar 2 $2) oriented InGaN quantum wells (QW). For the ($ \bar 1\bar 1 $) sample, the flat‐QW condition (the electric field in the QW is zero) is at a reverse bias voltage. For the (11$ \bar 2 $2) sample, the flat‐QW condition is at a forward bias voltage larger than the turn on voltage of the diode. However, the flat‐barrier condition (the electric field in the barrier region is zero) is at a forward bias voltage less than the turn on voltage of the diode. The flat‐QW condition and the flat‐barrier condition are determined by examining the zero‐crossing and the Franz‐Keldysh oscillations in the electroreflectance signal for (10$ \bar 1\bar 1 $) and (11$ \bar 2 $2) InGaN QWs, respectively. From the corresponding bias voltages, we deduce the polarization field in the QWs and conclude that in the semi‐polar InGaN/GaN QW there is a crossover angle between the polar and non‐polar orientations where the polarization field vanishes. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

show abstract

Section: Resultsmentioning

confidence: 98%

Polarization field crossover in semi‐polar InGaN/GaN single quantum wells

Shen

Garrett

Wraback

et al. 2010

Phys. Status Solidi (c)

View full text Add to dashboard Cite

show abstract

“…We thus associate this electromodulation with Ge nanoislands. In order to accurately determine the transition energies, we fit the data with a first-derivative Gaussian-type function [ 8 ]. The Gaussian line-shape analysis is appropriate for the inhomogeneous broadening related to the size fluctuations in ensemble of QDs.…”

Section: Resultsmentioning

confidence: 99%

Electromodulated reflectance study of self-assembled Ge/Si quantum dots

et al. 2011

View full text Add to dashboard Cite

We perform an electroreflectance spectroscopy of Ge/Si self-assembled quantum dots in the near-infrared and in the mid-infrared spectral range. Up to three optical transitions are observed. The low-energy resonance is proposed to correspond to a band-to-continuum hole transition in the Ge valence band. The other two modulation signals are attributed to the spatially direct transitions between the electrons confined in the L and Δ(4) valleys of the Ge conduction band, and the localized hole states at the Γ point.

show abstract

“…1,2 Such an effect is pronounced in peculiarities of the longitudinal transport 3,4 and of the magnetotransport. 5,6 Modification of the electron states and selection rules in DQW's due to tunneling has been also observed in the interband 7,8 and intersubband 9,10 optical spectra. Transition between tunnel-coupled ground states in DQW's under THz ͑far-infrared͒ radiation were analyzed.…”

Section: Introductionmentioning

confidence: 86%

Acoustic phonon modulation of the electron response in tunnel-coupled quantum wells

Vasko

Mitin

1997

Phys. Rev. B

View full text Add to dashboard Cite

Modulation of the electron properties of tunnel-coupled double quantum wells by acoustic phonon pumping is considered. Phonon-induced voltage ͑or induced dipole moment͒ and phonon-drag effect are calculated for the case of high-energy phonon excitation. Linear electron response, with respect to the phonon-pumping intensity, is studied taking into account intrawell and interwell scattering processes due to interface roughness. From numerical estimations we obtained a phonon-induced drop in the potential on the order of 0.1-0.01 meV and a characteristic drag velocity on the order of 100 cm/s for a nonequilibrium phonon temperature equal to 20 K. The possible applications of such structures are noted.

show abstract

Electroreflectance study of a symmetrically coupled GaAs/Ga0.77Al0.23As double quantum well system

Cited by 35 publications

References 18 publications

Polarization field crossover in semi‐polar InGaN/GaN single quantum wells

Polarization field crossover in semi‐polar InGaN/GaN single quantum wells

Electromodulated reflectance study of self-assembled Ge/Si quantum dots

Acoustic phonon modulation of the electron response in tunnel-coupled quantum wells

Contact Info

Product

Resources

About