Electroreflectance spectra of InGaN/AlGaN/GaN quantum-well heterostructures

Avakyants, L. P.; Badgutdinov, M. L.; Bokov, P. Yu.; Chervyakov, А. V.; Shirokov, S. S.; Yunovich, A. E.; Богданов, А. А.; Vasil'eva, E. D.; Николаев, Д. А.; Feopentov, A. V.

doi:10.1134/s1063782607090102

Cited by 9 publications

(3 citation statements)

References 10 publications

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“…( 6) and (7) with the LEO coefficient of 1.55 pm/V. 5) The same dependence was calculated for the In 0:12 Ga 0:88 N layer taking into account that the internal piezoelectric field strength is E int ¼ 1400 kV/cm, 9) the dielectric constant is " ¼ 7:82, 6) and the refractive indexes for GaN and In 0:12 Ga 0:88 N are equal at U dc ¼ þ0:1 V (see Fig. 2).…”

Section: Resultsmentioning

confidence: 82%

Linear Electro-Optic Effect in Electroreflectance Spectra of AlGaN/InGaN/GaN Light Emitting Diodes Structures

Avakyants¹,

Aslanyan²,

Bokov³

et al. 2013

Jpn. J. Appl. Phys.

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The linear electro-optic effect in InGaN/AlGaN/GaN pn-heterostructures for light emitting diodes, grown by metal–organic chemical vapor deposition on sapphire substrates and flip-chip mounted, was studied by electroreflectance spectroscopy. Interference fringes, whose parameters depend on the DC voltage applied on the pn-junction, were observed in electroreflectance spectra. Data analysis, based on a calculation of the built-in electric field in the depletion layer and linear electro-optic effect, yielded the linear electro-optic coefficient r 13 of 22±6 pm/V for hexagonal In0.12Ga0.88N.

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Section: Resultsmentioning

confidence: 82%

Linear Electro-Optic Effect in Electroreflectance Spectra of AlGaN/InGaN/GaN Light Emitting Diodes Structures

Avakyants¹,

Aslanyan²,

Bokov³

et al. 2013

Jpn. J. Appl. Phys.

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“…Studies on interband excitonic transitions in wurtzite single-crystal GaN films [67], InGaN alloys [68], InGaN/GaN [69,70], and InGaAs/GaAs [71][72][73] single and multi-quantum well structures have already been reported, among them several using ER techniques [74][75][76][77][78][79][80][81][82][83]. However, no reports on the polarization fields of InGaN/GaN double heterostructure quantum wells determined by electro-modulation (ER) in complement with capacitance-voltage (CVM) techniques have been available up to now.…”

Section: Pin-diodes Based On Ingan/gan Dhs With 55% Inmentioning

confidence: 99%

Calibration of Polarization Fields and Electro-Optical Response of Group-III Nitride Based c-Plane Quantum-Well Heterostructures by Application of Electro-Modulation Techniques

Papadimitriou

2019

Applied Sciences

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The polarization fields and electro-optical response of PIN-diodes based on nearly lattice-matched InGaN/GaN and InAlN/GaN double heterostructure quantum wells grown on (0001) sapphire substrates by metalorganic vapor phase epitaxy were experimentally quantified. Dependent on the indium content and the applied voltage, an intense near ultra-violet emission was observed from GaN (with fundamental energy gap Eg = 3.4 eV) in the electroluminescence (EL) spectra of the InGaN/GaN and InAlN/GaN PIN-diodes. In addition, in the electroreflectance (ER) spectra of the GaN barrier structure of InAlN/GaN diodes, the three valence-split bands, Γ9, Γ7+, and Γ7−, could selectively be excited by varying the applied AC voltage, which opens new possibilities for the fine adjustment of UV emission components in deep well/shallow barrier DHS. The internal polarization field Epol = 5.4 ± 1.6 MV/cm extracted from the ER spectra of the In0.21Al0.79N/GaN DHS is in excellent agreement with the literature value of capacitance-voltage measurements (CVM) Epol = 5.1 ± 0.8 MV/cm. The strength and direction of the polarization field Epol = −2.3 ± 0.3 MV/cm of the (0001) In0.055Ga0.945N/GaN DHS determined, under flat-barrier conditions, from the Franz-Keldysh oscillations (FKOs) of the electro-optically modulated field are also in agreement with the CVM results Epol = −1.2 ± 0.4 MV/cm. The (absolute) field strength is accordingly significantly higher than the Epol strength quantified in published literature by FKOs on a semipolar ( 11 2 ¯ 2 ) oriented In0.12Ga0.88N quantum well.

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“…The absolute value of the generated photocurrent of the Si photodiode corresponds to the reflectivity of the sample under investigation (R) and has been recorded by a digital multimeter, while the signal was additionally preamplified and fed into a lock-in amplifier and the phasesensitive change of the photocurrent was recorded ( R Δ ). The modulation of the reflectivity R Δ is caused by applying a rectangularly modulated voltage to the contacts of the structure [8,15]. For the quaternary HEMT structures, the voltages were varied between values of +1 and 0, −1,… −11 V, so the amplitude of the modulation voltage U Δ was varied between 0.5 and 6 V. In our case…”

Section: Samples and Experimental Detailsmentioning

confidence: 99%

Electroreflectance characterization of AlInGaN/GaN high-electron mobility heterostructures

Bokov¹,

Brazzini²,

Romero³

et al. 2015

Semicond. Sci. Technol.

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Room temperature electroreflectance (ER) spectroscopy has been used to study the fundamental properties of Al x In y Gai .j.^N/AlN/GaN heterostructures under different applied bias. The (OOOl)-oriented heterostructures were grown by metal-organic vapor phase epitaxy on sapphire. The band gap energy of the Al x ln y GcLi_ x _yN layers has been determined from analysis of the ER spectra using Aspnes' model. The obtained values are in good agreement with a nonlinear band gap interpolation equation proposed earlier. Bias-dependent ER allows one to determine the sheet carrier density of the two-dimensional electron gas and the barrier field strength.

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Electroreflectance spectra of InGaN/AlGaN/GaN quantum-well heterostructures

Cited by 9 publications

References 10 publications

Linear Electro-Optic Effect in Electroreflectance Spectra of AlGaN/InGaN/GaN Light Emitting Diodes Structures

Linear Electro-Optic Effect in Electroreflectance Spectra of AlGaN/InGaN/GaN Light Emitting Diodes Structures

Calibration of Polarization Fields and Electro-Optical Response of Group-III Nitride Based c-Plane Quantum-Well Heterostructures by Application of Electro-Modulation Techniques

Electroreflectance characterization of AlInGaN/GaN high-electron mobility heterostructures

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