Electrophysical phenomena accompanying femtosecond impacts of laser radiation on semiconductors

Dyukin, R. V.; Martsinovskiĭ, G. A.; Shandybina, G. D.; Yakovlev, E. B.

doi:10.1364/jot.78.000088

Cited by 8 publications

(9 citation statements)

References 10 publications

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“…In equilibrium conditions, the plasma frequency for graphite can be estimated as ℏω p N 0 el À Á ¼ 0:9 eV is [17,18]. The intraband absorption coefficient can be presented in the following form:…”

Section: Discussionmentioning

confidence: 99%

The laser assisted field electron emission from carbon nanostructure

Lyashenko

Svirko

Petrov

et al. 2017

J. Eur. Opt. Soc.-Rapid Publ.

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We present experimental and theoretical study of the femtosecond light-assisted field electron emission from nanocarbon films. We demonstrate that irradiation with intense femtosecond laser pulse allows one to achieve electron emission density of up to 13 nC/cm 2 at a moderate applied static electric filed. The developed model well describes obtained experimental results and allows us to visualize physical mechanisms including heating of electron gas, multiphoton photoionization, and the space charge formation, which are responsible for the observed phenomena.

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Section: Discussionmentioning

confidence: 99%

The laser assisted field electron emission from carbon nanostructure

Lyashenko

Svirko

Petrov

et al. 2017

J. Eur. Opt. Soc.-Rapid Publ.

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“…where the absorption and reflection constants of the amorphous GST225 thin films for the wavelength of 1250 nm are taken as α = 24,500 cm −1 and R = 0.39 [27], respectively. Laser pulse intensity I(t) is defined as follows [35]:…”

Section: Theoretical Simulation Of Surface Photoexcitation and Lipss Formationmentioning

confidence: 99%

Periodic Relief Fabrication and Reversible Phase Transitions in Amorphous Ge2Sb2Te5 Thin Films upon Multi-Pulse Femtosecond Irradiation

Zabotnov

Kolchin

Shuleiko

et al. 2022

Micro

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Ge2Sb2Te5 based devices attract the attention of researchers due to wide opportunities in designing phase change memory. Herein, we studied a possibility to fabricate periodic micro- and nanorelief at surfaces of Ge2Sb2Te5 thin films on silicon oxide/silicon substrates under multi-pulse femtosecond laser irradiation with the wavelength of 1250 nm. One-dimensional lattices with periods of 1250 ± 90 and 130 ± 30 nm were obtained depending on the number of acted laser pulses. Emergence of these structures can be explained by plasmon-polariton generation and laser-induced hydrodynamic instabilities, respectively. Additionally, formation of the lattices whose spatial period is close to the impacted laser wavelength can be modelled by considering the free carrier contribution under intensive photoexcitation. Raman spectroscopy revealed both crystallization and re-amorphization of the irradiated films. The obtained results show a possibility to fabricate rewritable all-dielectric data-storage devices based on Ge2Sb2Te5 with the periodic relief.

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“…On the other hand, the maximum value of nonequilibrium charge carrier’s density N achieved in the a-Si:H film upon femtosecond laser irradiation can be estimated by the differential equation:

where α , β are the one-photon and two-photon absorption coefficients, respectively; R is the reflection coefficient and I ( t ) is the incident laser radiation intensity. Temporal distribution of the laser radiation intensity within the pulse for the Equation (3) was described as follows [ 22 ]:

where Q = 0.5 J/cm 2 is the fluence of a laser pulse.…”

Section: Theoretical Modeling Of the Lipss Formationmentioning

confidence: 99%

Fabricating Femtosecond Laser-Induced Periodic Surface Structures with Electrophysical Anisotropy on Amorphous Silicon

et al. 2020

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One-dimensional periodic surface structures were formed by femtosecond laser irradiation of amorphous hydrogenated silicon (a-Si:H) films. The a-Si:H laser processing conditions influence on the periodic relief formation as well as correlation of irradiated surfaces structural properties with their electrophysical properties were investigated. The surface structures with the period of 0.88 and 1.12 μm were fabricated at the laser wavelength of 1.25 μm and laser pulse number of 30 and 750, respectively. The orientation of the surface structure is defined by the laser polarization and depends on the concentration of nonequilibrium carriers excited by the femtosecond laser pulses in the near-surface region of the film, which affects a mode of the excited surface electromagnetic wave which is responsible for the periodic relief formation. Femtosecond laser irradiation increases the a-Si:H films conductivity by 3 to 4 orders of magnitude, up to 1.2 × 10−5 S∙cm, due to formation of Si nanocrystalline phase with the volume fraction from 17 to 28%. Dark conductivity and photoconductivity anisotropy, observed in the irradiated a-Si:H films is explained by a depolarizing effect inside periodic microscale relief, nonuniform crystalline Si phase distribution, as well as different carrier mobility and lifetime in plane of the studied samples along and perpendicular to the laser-induced periodic surface structures orientation, that was confirmed by the measured photoconductivity and absorption coefficient spectra.

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Electrophysical phenomena accompanying femtosecond impacts of laser radiation on semiconductors

Cited by 8 publications

References 10 publications

The laser assisted field electron emission from carbon nanostructure

The laser assisted field electron emission from carbon nanostructure

Periodic Relief Fabrication and Reversible Phase Transitions in Amorphous Ge2Sb2Te5 Thin Films upon Multi-Pulse Femtosecond Irradiation

Fabricating Femtosecond Laser-Induced Periodic Surface Structures with Electrophysical Anisotropy on Amorphous Silicon

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