Electrophoretic displays driven by all‐oxide thin‐film transistor backplanes fabricated using a solution process

Abstract

Precursor solutions and a solution process were developed for the fabrication of amorphous oxide thin-film transistors (TFTs). All the layers of the TFTs comprised oxide films prepared from precursor solutions. The gate lines, gate insulator, and channel layer comprised ruthenium oxide, lanthanum zirconium oxide, and zirconium indium zinc oxide films. The polysilazane-based silicon dioxide film was used for the channel stopper layer. The source-line and drain electrode had a double-layer structure comprising indium tin oxide and ruthenium oxide films. The silsesquioxane-based silicon dioxide and ruthenium oxide films were used for the passivation layer and pixel electrodes, respectively. The TFTs exhibited a field effect mobility of 2.68 cm 2 V À1 s À1 , a sub-threshold swing of 1.09 V/decade, a threshold voltage of 3.06 V, and an on/off ratio of 10 5 . Active-matrix electrophoretic displays (EPDs) with a resolution of 101.6 ppi were successfully fabricated using the all-solution-processed TFTs. Bi-stable black/ white images were confirmed in these TFT-EPDs for the first time.

Sub-second photonic processing of solution-deposited single layer and heterojunction metal oxide thin-film transistors using a high-power xenon flash lamp

“…[1][2][3] Furthermore, the relatively simple chemistry of most metal oxides makes them compatible with solution-based processing routes, and hence low-cost, largevolume manufacturing. 4 That is why in recent years oxide semiconductors have successfully been utilized across a spectrum of applications including displays, 5 biosensors, 6 and radio-frequency identification tags 7 that can be manufactured using different solution-based processing techniques amongst which printing 8 and spraying 9 .…”

P‐11: High Performance All‐Solution Processed InZnO Thin‐Film Transistors via Photo‐Functionalization at Varying Fluence and Annealing Environment

“…To date, there have been few reports on all-solution-processed oxide TFT fabrication. However, key issues remain such as hightemperature fabrication (>400˚C), requirement of diverse materials and numerous patterning steps, and μ <10 cm 2 V -1 s -1 [6,7]. Here, we demonstrate high-performance all-solution processed IZO TFTs with a maximum fabrication temperature of 300˚C.…”

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Low-Temperature Solution-Processable Functional Oxide Materials for Printed Electronics

“…Precursor solutions and a solution process were developed for the fabrication of active-matrix amorphous oxide-TFTs [102]. The gate lines (GE), gate insulator (GI), and channel layer (CH) comprised RuO 2 , LZO, and ZIZO films, respectively.…”