Electrooptical effects in silicon

Soref, Richard A.; Bennett, B. R.

doi:10.1109/jqe.1987.1073206

Cited by 2,366 publications

(1,264 citation statements)

References 13 publications

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“…The tunable laser injected light with wavelength from 1530 to 1570 nm into the waveguide. As demonstrated in Figure 7, this resonator exhibits a free spectra range (FSR) of 9.44 nm, 3 dB bandwidth of 0.074 nm, ER higher than 20 dB and high Q better than 4 . The first step was to test the static characteristics of the modulator.…”

Section: Resultsmentioning

confidence: 95%

“…Various mechanisms for realizing highspeed modulation in silicon material have been investigated throughout the years. The main method is altering the refractive index of Silicon, which is based on thermo-optic effect or plasma dispersion effect [4]. The thermo-optic effect is too slow to realize modulation frequencies higher than 1-MHz [8].…”

Section: Introductionmentioning

confidence: 99%

“…The thermo-optic effect is too slow to realize modulation frequencies higher than 1-MHz [8]. Thus, the plasma dispersion effect is considered as the most effective way of refraction index modulation in silicon [4]. Few structures of electro-optic modulator have been reported, such as P-I-N diode in injection type [1][2][3][5][6], PN diode in depletion type [7-12, 15-17, 21], MOS capacitor [13] and so on.…”

Section: Introductionmentioning

confidence: 99%

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Fabrication of depletion type micro-ring modulator with high extinction ratio and high coupling quality factor

et al. 2017

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Abstract. We experimentally demonstrate an optical micro-ring modulator based on a reverse-biased PN junction which is integrated into a silicon-on-insulator (SOI) rib waveguide. The performance of micro-ring resonator with different sizes is simulated with Lumerical MODE Solutions. The fabricated device provides a high extinction ratio (ER) of 20 4 . Modulation rate is higher than 11 Gbit/s with only 2 V peak-to-peak (Vpp) driving voltage. The theoretical modulation rate can be higher than 25 Gbit/s by the optimizing the matching resistor and the test system.

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Section: Resultsmentioning

confidence: 95%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Fabrication of depletion type micro-ring modulator with high extinction ratio and high coupling quality factor

et al. 2017

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“…Th e refractive index change induced by the presence of free charge carriers, known as the plasma eff ect, has been generally used for making silicon optical modulators [2]. Th e plasma eff ect was systematically characterized by Soref and Bennett in 1987 [26]. Both the refractive index and optical absorption are changed by free carriers.…”

Section: High-speed Optical Modulatorsmentioning

confidence: 99%

Device engineering for silicon photonics

Chen

Tsang

2011

NPG Asia Mater

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A fter an impressive initial spurt of progress in device engineering during the early 2000s when the optical communications industry saw unprecedented levels of investment, silicon photonics continues to develop at an amazing pace. Many novel applications and devices are emerging. Silicon photonics has the potential to become a major platform for optoelectronic integrated circuits (OEICs) and to be used in high-speed optical interconnects for chip-level data communications because of the extremely large bandwidth and high speed off ered by optical communications. Many challenges have been addressed through the introduction of innovative ideas, paving the way for the practical deployment of silicon-based optoelectronic devices and integrated photonic circuits in computing and telecommunication systems [1]. Th e commercialization of silicon photonics, originally driven by applications in telecommunications, is now also driven by the needs of the computing industry for highspeed, energy-effi cient optical cable technology, such as the Light Peak Technology under development by Intel (USA). Th e California-based company Luxtera (USA) has also commercialized a series of siliconphotonic transceiver systems.Silicon off ers many advantages over alternative material systems (e.g. InP, GaAs, LiNbO 3 ) for OEIC applications. One major reason for the wide interest that silicon photonics is attracting is the cost advantage that silicon photonics can potentially off er through its compatibility with the complementary metal-oxide-semiconductor (CMOS) fabrication processes used in the microelectronics industry. Th e huge investments that have been made in CMOS microelectronics fabrication technologies has resulted in processes that off er much higher yield than is possible using alternative materials for photonics, thus making feasible large-scale integration and the production of silicon-photonic devices that are monolithically integrated with not only optical components but also electronic circuits in the same platform at ultrahigh density. Another reason for the attractiveness of silicon photonics is the high refractive index contrast between the silicon core (refractive index, 3.48) and silicon dioxide cladding (refractive index, 1.45) in silicon-on-insulator (SOI) devices, which ensures the submicrometer confi nement of light and allows tight bending in optical waveguides. Th e high-density integration of photonic circuits on SOI platforms is thus feasible. Th e low cost of high-quality SOI wafers is another advantage of silicon photonics. All kinds of low-cost devices enabled by silicon photonics are therefore predicted, and these may also enjoy the other benefi ts of monolithic integration: smaller size, increased power effi ciency and improved reliability. Figure 1 shows an example of a high-density integrated photonics devices fabricated on a 6-inch SOI wafer using CMOS-compatible technology.In this article, we review some of the exciting progress that has been made in silicon photonics with the aim of providing a broa...

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“…Refractive index shift is related to free carrier distribution by well known Soref's relation at wavelength of 1550 nm (Soref & Bennett, 1987 …”

Section: Recent Advances In Modelling and Simulation 378mentioning

confidence: 99%