Electrooptic planar deflector switches with thin-film PLZT active elements

Glebov, Alexei L.; Lee, M.G.; Huang, Lixi; Aoki, Shigeki; Yokouchi, Kishio; Ishii, Masatoshi; Kato, Masayuki

doi:10.1109/jstqe.2005.846515

Cited by 26 publications

(19 citation statements)

References 23 publications

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“…Previously, 20 ns switching was demonstrated in PLZT digital switch [10]. Also, 500 ns switching was reported in deflector type PLZT switch [11]. However, optical packet switching systems typically require less than 10 ns.…”

Section: Directional Coupler Switchmentioning

confidence: 99%

High-speed PLZT optical switches for burst and packet switching

Nashimoto

Tanaka

Labuda

et al. 2005

2nd International Conference on Broadband Networks, 2005.

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Pb,La)(Zr,Ti)O 3 (PLZT) is one of the best candidates in terms of high-speed, low-voltage, and low-power consumption optical switching due to its efficient voltage-induced index change. We have established a solid-phase epitaxy to grow low-loss PLZT thin film waveguides. PLZT waveguides with PLZT buffer layers are grown on Nb-doped semiconductive SrTiO 3 substrates for the effective overlap integral of the optical field and the electric field. Efficient switching of light coupled in the waveguides is achieved by applying voltage between the top electrodes and the substrates to induce the excellent electro-optic properties of PLZT waveguides including low-voltage and polarization independent index change. 1xN optical switching devices and subsystems are demonstrated using the PLZT waveguide switch elements showing low-voltage drive and less than 10 ns response characteristics.

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Section: Directional Coupler Switchmentioning

confidence: 99%

High-speed PLZT optical switches for burst and packet switching

Nashimoto

Tanaka

Labuda

et al. 2005

2nd International Conference on Broadband Networks, 2005.

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“…O PTICAL switching with submicrosecond speeds has been a subject of active research and development in recent years for utilization in optical burst transport networks [1]- [4]. The required switching times of less than 1 s can be achieved using electrooptic (EO) materials as active elements in the switches.…”

Section: Introductionmentioning

confidence: 99%

“…The required switching times of less than 1 s can be achieved using electrooptic (EO) materials as active elements in the switches. EO switches based on light beam spatial deflection were demonstrated in recent years in planar [1], [2] and bulk [3] configurations. A variety of bulk and thin-film EO materials [1]- [6] such as, for example, lead lanthanum zirconium titanate (PLZT) [1], [5] can be used for light beam deflection in switches; however, thin films enable significant reduction of the switch driving voltages.…”

Section: Introductionmentioning

confidence: 99%

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Angle Selective Enhancement of Beam Deflection in High-Speed Electrooptic Switches

Glebov

Sugama

Smirnov

et al. 2007

IEEE Photon. Technol. Lett.

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Fast electrooptic (EO) deflector switches (DSs) have high potential for applications in optical burst transport networks. EO properties of active materials used in the DSs can impose some limitations on their beam deflection efficiencies. Using a test setup with planar silica waveguide microlens arrays, thin-film ferroelectric oxide beam deflectors, and glass volume Bragg gratings, we demonstrate that the beam deflection angle can be increased by more than a factor of 5 for the same switching voltages. The technology enables significant performance improvement of the fast EO DSs.

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“…If ferroelectric materials were embedded in film form with semiconductor integrated circuits, novel optical devices such as a spatial light modulator of the electrooptic type (EO-SLM), 1) an integrated optical waveguide 2) and a tunable photonic crystal 3) would be realized. (Pb,La)(Zr,Ti)O 3 (PLZT) is a potential material for future integrated optical devices because of having a high electrooptic coefficient.…”

Section: Introductionmentioning

confidence: 99%

Composition dependence of electrooptic property of epitaxial (Pb,La)(Zr,Ti)O3 films

Shima

Iijima

Nakajima

et al. 2010

J. Ceram. Soc. Japan

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The Zr/Ti ratio dependence of refractive index and electrooptic coefficient of epitaxial (Pb,La)(Zr,Ti)O 3 (PLZT) films were investigated. PLZT films were fabricated on La-doped SrTiO 3 (La-STO) substrates by a chemical solution deposition (CSD) method. Optical properties in TE-and TM-modes were measured individually using a prism coupling method. The refractive indexes both in TE-and TM-modes were as large as that of the polycrystalline film, and increased with increasing Ti/(Zr + Ti) ratio. The refractive index in TE-mode was larger than that in TM-mode because the PLZT films received compressive stress from the La-STO substrates due to lattice mismatch. The refractive index in TM-mode almost linearly decreased with increasing applied an electric field while that in TE-mode slightly increased and saturated around at 200 kV/cm. The Pockels coefficient in TM-mode r 33 showed large change for compositions, while that in TE-mode r 13 showed little change. The maximum Pockels coefficient r c of 156 pm/V was obtained for the epitaxial PLZT film with Ti/(Zr + Ti) ratio of 50%.

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Electrooptic planar deflector switches with thin-film PLZT active elements

Cited by 26 publications

References 23 publications

High-speed PLZT optical switches for burst and packet switching

High-speed PLZT optical switches for burst and packet switching

Angle Selective Enhancement of Beam Deflection in High-Speed Electrooptic Switches

Composition dependence of electrooptic property of epitaxial (Pb,La)(Zr,Ti)O3 films

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