“…Electrons from the surfaces of metals or semiconductors can only be knocked off when an external force supplies additional energy [ 72 ]. This extra energy can be produced using a variety of methods, including thermal processes, energy storage in an electric field, using the kinetic energy of charges, or light energy.…”
Copper-filled vertically aligned carbon nanotubes (Cu@VACNTs) were grown directly on Cu foil substrates of 0.1 mm thicknesses at different temperatures via plasma-enhanced chemical vapor deposition (PECVD). By circumventing the need for additional catalyst layers or intensive substrate treatments, our in-situ technique offers a simplified and potentially scalable route for fabricating Cu@VACNTs with enhanced electrical and thermal properties on thin Cu foils. Comprehensive analysis using field emission scanning microscopy (FESEM), transmission electron microscopy (TEM), energy-dispersive X-ray spectroscopy (EDS) mappings, and X-ray diffraction (XRD) revealed uniform Cu filling within the VACNTs across a range of synthesis temperatures (650 °C, 700 °C, and 760 °C). Field emission (FE) measurements of the sample synthesized at 700 °C (S700) showed low turn-on and threshold fields of 2.33 V/μm and 3.29 V/μm, respectively. The findings demonstrate the viability of thin Cu substrates in creating dense and highly conductive Cu-filled VACNT arrays for advanced electronic and nanoelectronics applications.
“…Electrons from the surfaces of metals or semiconductors can only be knocked off when an external force supplies additional energy [ 72 ]. This extra energy can be produced using a variety of methods, including thermal processes, energy storage in an electric field, using the kinetic energy of charges, or light energy.…”
Copper-filled vertically aligned carbon nanotubes (Cu@VACNTs) were grown directly on Cu foil substrates of 0.1 mm thicknesses at different temperatures via plasma-enhanced chemical vapor deposition (PECVD). By circumventing the need for additional catalyst layers or intensive substrate treatments, our in-situ technique offers a simplified and potentially scalable route for fabricating Cu@VACNTs with enhanced electrical and thermal properties on thin Cu foils. Comprehensive analysis using field emission scanning microscopy (FESEM), transmission electron microscopy (TEM), energy-dispersive X-ray spectroscopy (EDS) mappings, and X-ray diffraction (XRD) revealed uniform Cu filling within the VACNTs across a range of synthesis temperatures (650 °C, 700 °C, and 760 °C). Field emission (FE) measurements of the sample synthesized at 700 °C (S700) showed low turn-on and threshold fields of 2.33 V/μm and 3.29 V/μm, respectively. The findings demonstrate the viability of thin Cu substrates in creating dense and highly conductive Cu-filled VACNT arrays for advanced electronic and nanoelectronics applications.
“…Two key upgrades for the comprehensive diagnostics of UHDR beams can be highlighted in the proposed prototype: (i) measuring the pulse duration to evaluate the instantaneous dose-rate of each pulse, and (ii) validating the instrument with commercial dosimeters (e.g., the PTW-microDiamond). Nevertheless, all-carbon detectors based on diamond samples [33] , [34] , [35] , with sputter-deposited or laser-induced graphitic contacts better fulfill the tissue equivalence requirement for radiotherapy dosimetry and would offer a valuable alternative to eliminate the possible spurious signals induced by secondary electrons emitted by metallic contacts [36] . Furthermore, we would like to emphasize that the implemented measurement method may mitigate the detrimental effects of non-linear conduction mechanisms induced by structural defects distributed within the active volume of the detectors [37] , as expected for laser-processed diamond samples [34] , [38] .…”
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