Electrons and optic phonons in solids-the effects of longitudinal optical lattice vibrations on the electronic excitations of solids

Harper, P.G.; Hodby, J.W.; Stradling, R. A.

doi:10.1088/0034-4885/36/1/001

Cited by 184 publications

(29 citation statements)

References 124 publications

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“…We observe that resistivity minima now occur at the δn = 1 and δn = 1/2 MPR conditions. This is in good agreement with the bulk approximation in which the LMPR is observed as a resistivity minimum slightly below the MPR condition [14]. For sample 3756 the δn = 1/2 MPR feature is particularly enhanced by proximity to the SLMPR condition.…”

Section: Discussionsupporting

confidence: 89%

“…k · p calculation results for samples 3756 and 4520 indicate that if observed the SLMPR would be located at B = 26.1 T and B = 31.3 T respectively. In experiment (figure 5) both exhibit resistance minima features at around 20 T which correspond well with the predicted δn = 1/2 MPR resonances which is also particularly strong in the Longitudinal configuration for bulk materials [14] suggesting that the transition to bulk behavior has occurred for these structures. This will be discussed further later in this report.…”

Section: Discussionsupporting

confidence: 71%

“…We observe that resistivity maxima (d 2 R/dB 2 minima) occur at fields slightly above the conventional MPR resonance position. The experimentally observed resistivity minima labelled as δn = 1 LMPR are typically seen when ω c /ω LO = 0.87 ± 0.06 in good agreement with bulk LMPR resonances [13,14]. By contrast the SLMPR features move up in field due to the increased contribution from ∆ in equation 2 and show excellent agreement with the predicted SLMPR positions when account is taken of the magnetic field dependence of the miniband width.…”

Section: Discussionsupporting

confidence: 70%

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Superlattice magnetophonon resonances in strongly coupledInAs∕GaSbsuperlattices

et al. 2007

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We report an experimental study of miniband magnetoconduction in semiconducting InAs/GaSb superlattices. For samples with miniband widths below the longitudinal optical phonon energy we identify a new superlattice magnetophonon resonance (SLMPR) caused by resonant scattering of electrons across the mini-Brillouin zone. This new resonant feature arises directly from the superlattice dispersion and total magnetic quantisation (energetic decoupling) of the superlattice Landau level minibands.Semiconductor superlattices (SL's) comprise alternating layers of two or more semiconductor materials, leading to the formation of continuous energy bands in the growth direction called minibands. The reduced Brillouin zone and energy band width of the SL allows measurements that probe parameter spaces which are inaccessible in bulk semiconductors. Total quantisation of the superlattice energy scheme can be achieved by the application of a large magnetic field which suppresses inter-Landau level miniband (LLMB) scattering and allows the realisation of a 'quasi' 1-dimensional or quantum box SL (QBSL) regime. This has led to strong interest in the SL magnetoresistance and transport characteristics [1, 2, 3, 4, 5]. The SL miniband structure can be engineered such that in the QBSL regime optical phonon scattering is limited [6,7] by using narrow minigap and miniband widths, leaving only weak acoustic-phonon processes to dissipate the electron energy. In this report we investigate magnetotransport properties of InAs/GaSb superlattices in the miniband transport regime. In a previous publication [5] we investigated hot-electron magnetophonon resonance caused by the LO phonon mediated hopping between Landau Wannier-Stark states at low temperatures. In this report we study longitudinal magnetophonon resonances caused by the resonant emission/absorption of longitudinal optical (LO) phonons in the miniband transport regime for a range of SL structures at high tempertures. Through a systematic study using different miniband widths we identify a new form of magnetophonon resonance which provides evidence for the energetic de-coupling of SL Landau level minibands leading to suppression of optical phonon scattering.

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Section: Discussionsupporting

confidence: 89%

Section: Discussionsupporting

confidence: 71%

Section: Discussionsupporting

confidence: 70%

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Superlattice magnetophonon resonances in strongly coupledInAs∕GaSbsuperlattices

et al. 2007

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“…We shall refer to this new state as a magnetopolaroc It should not he confused the usual meaning of tfe« u.-.m af^xiated with the cyclotron resonance condition ii(i> c =O.036ev". 12 For GaAs, the energy splitting induced by the electron-phonon interaction in the absence of a magnetic field is negligibly small. However, when the free electrons sre confined to one dimension by a magnetic field, the energy lowering is strongly enhanced because of the divergent density of states at zero energy.…”

Section: Magnetojpolaronsmentioning

confidence: 99%

Mechanism of current modulation by optic phonon emission in heterojunction tunneling experiments

Hanna¹,

Hellman²,

Laughlin³

1985

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“…Cyclotron resonance in alkali halides have been studied by Hodby et al [17]. Most of the detailed studies on the polaron effect have been made on III-V compounds.…”

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confidence: 99%

Polaron cyclotron resonance in II–VI compounds at high magnetic fields

Miura¹,

Imanaka

2003

Physica Status Solidi (b)

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In this paper, we discuss the cyclotron resonance in II-VI compounds in very high magnetic fields, in particular, those in CdS where many different anomalies were observed in high magnetic fields. High magnetic fields enable us to observe clean cyclotron resonance spectra even in low mobility crystals, thus in most II-VI semiconductors we can study the polaron effect up to the high energy range well above the LO phonon energy. Resonant polaron effect is observed prominently and we can estimate the electron-phonon coupling strength from the magnitude of the anticrossing effect. In addition to the resonant polaron interaction, it was found that cyclotron effective mass shows a peculiar temperature dependence which is explained theoretically by the combination of the electron-phonon interaction and the impurity scattering.1 Introduction In high magnetic fields, the effective mass of electrons and holes are largely modified by the non-parabolicity of energy bands due to the k Á p interaction between the bands. The effective mass is usually significantly larger than the band edge mass when we measure it in high magnetic fields. In polar semiconductors such as II-VI or III-V compounds, the polaron effect is also a key factor that determines the effective mass. Electrons strongly interact with LO phonons and conduct a motion as polarons which have heavier mass than bare electrons.When hw c approaches the LO phonon energy hw 0 in high magnetic fields, the interaction between electrons and LO phonons increases resonantly and a large break takes place in the magnetic field dependence of the energy of the Landau levels. The effect of the enhanced electron-LO phonon interaction near the resonance condition is called the resonant polaron effect. The effect was first observed by Dickey, Johnson and Larsen in n-type InSb where such a resonance can be readily achieved due to the light effective mass [1]. Many investigations have been made on the resonant polaron effect both theoretically [2][3][4][5] and experimentally [6][7][8][9][10][11][13][14][15]. The polaron pinning effect was observed also for the impurity transitions [16].

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Electrons and optic phonons in solids-the effects of longitudinal optical lattice vibrations on the electronic excitations of solids

Cited by 184 publications

References 124 publications

Superlattice magnetophonon resonances in strongly coupledInAs∕GaSbsuperlattices

Superlattice magnetophonon resonances in strongly coupledInAs∕GaSbsuperlattices

Mechanism of current modulation by optic phonon emission in heterojunction tunneling experiments

Polaron cyclotron resonance in II–VI compounds at high magnetic fields

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