Electronically driven superconductor-insulator transition in electrostatically doped La2CuO4+δthin films

Abstract

Using an electronic double layer transistor we have systematically studied the superconductor to insulator transition in La2CuO 4+δ thin films growth by ozone assisted molecular beam epitaxy. We have confirmed the high crystalline quality of the cuprate films and have demonstrated the suitability of the electronic double layer technique to continuously vary the charge density in a system that is otherwise characterized by the presence of miscibility gaps. The transport and magneto-transport results highlight the role of electron-electron interactions in the mechanism of the transition due to the proximity of the Mott insulating state.

In operando evidence of deoxygenation in ionic liquid gating of YBa 2 Cu 3 O 7-X

“…Specifically, in the case of high-temperature cuprate superconductors (16)(17)(18)(19)(20), a striking similarity between the bulk phase diagram and the one achieved with the EDL technique was observed. This result demonstrated that the application of positive gate voltages to hole-doped cuprate EDL transistors induces the depletion of charge carriers.…”

“…Gating experiments allowing its controlled modification have attracted much attention (2)(3)(4)(5)(6)(7)(8), and in recent years, unprecedented changes in the carrier concentration of complex materials have been achieved by using electric double-layer (EDL) techniques that use ionic liquids (ILs) as gate dielectrics (9)(10)(11). Superconductivity has been induced in otherwise band-insulating materials such as SrTiO 3 (STO) (12), ZrNCl (13), KTaO 3 (14), or MoS 2 (15), and the superconducting properties of several cuprates have been tuned to the insulating state (16)(17)(18)(19)(20). These results have focused much attention on the EDL technique not only from an applied point of view but also for providing an opportunity to obtain fundamental knowledge about the phase diagrams.…”

TopologicalD+p-wave superconductivity in Rashba systems

“…Furthermore, Rashba spin-orbit coupling is introduced into the 2D high-T c cuprate SC [33][34][35][36][37][38][39] and 3D heavy-fermion SC [49][50][51][52] by intrinsically or externally breaking the space inversion symmetry. Artificial control of dimensionality has also been achieved in heavy-fermion superlattices [67][68][69] .…”

Nonequilibrium gap collapse near a first-order Mott transition

“…Indeed, we note that the Mott insulating materials where the dielectric breakdown has been experimentally observed so far, at least to our knowledge, all have a charge gap that is either of charge-transfer origin, like NiO, 15 Cu 2 O, 16 or cuprates, 17,18 , or it is an inter-band gap between Mottlocalized occupied orbitals and unoccupied ones, all sharing the same atomic d-character, like VO 2 , 19 or V 2 O 3 .…”