Electronic Transport Properties of Silicane Determined from First Principles

Abstract

Silicane, a hydrogenated monolayer of hexagonal silicon, is a candidate material for future complementary metal-oxide-semiconductor technology. We determined the phonon-limited mobility and the velocity-field characteristics for electrons and holes in silicane from first principles, relying on density functional theory. Transport calculations were performed using a full-band Monte Carlo scheme. Scattering rates were determined from interpolated electron–phonon matrix elements determined from density functional perturbation theory. We found that the main source of scattering for electrons and holes was the ZA phonons. Different cut-off wavelengths ranging from 0.58 nm to 16 nm were used to study the possible suppression of the out-of-plane acoustic (ZA) phonons. The low-field mobility of electrons (holes) was obtained as 5 (10) cm2/(Vs) with a long wavelength ZA phonon cut-off of 16 nm. We showed that higher electron (hole) mobilities of 24 (101) cm2/(Vs) can be achieved with a cut-off wavelength of 4 nm, while completely suppressing ZA phonons results in an even higher electron (hole) mobility of 53 (109) cm2/(Vs). Velocity-field characteristics showed velocity saturation at 3 × 105 V/cm, and negative differential mobility was observed at larger fields. The silicane mobility was competitive with other two-dimensional materials, such as transition-metal dichalcogenides or phosphorene, predicted using similar full-band Monte Carlo calculations. Therefore, silicon in its most extremely scaled form remains a competitive material for future nanoscale transistor technology, provided scattering with out-of-plane acoustic phonons could be suppressed.

Monte Carlo Study of Electronic Transport in Monolayer InSe

“…The great success of graphene [1,2] has been followed by an equally impressive surge of the study of other two-dimensional (2D) materials. Recently, 2D materials, including graphene [1,2], phosphorene [3][4][5][6][7], silicene [8][9][10], silicane [9,[11][12][13], germanene [8][9][10]14], and transition metal dichalcogenides [15][16][17][18][19][20], have been widely studied for their unique electrical and optical properties. The presence of a band gap in 2D transition-metal chalcogenides [21] has made this class of materials appealing for applications in field effect transistors (FETs).…”

The effect of pressure on structural, stability, electronic, and optical properties of hydrogenated silicene: A first-principle study

“…Nguyen et al [38] have studied the hydrogenated silicene and graphene that confirms silicene has a strong binding with hydrogen compared to graphene. Some researchers calculated the carrier mobility and electron transport properties of silicene and hydrogenated silicene [39][40][41]. Molecular dynamics simulation reveals the stability of adsorption configurations of hydrogenated silicene [42].…”

Monte Carlo analysis of phosphorene nanotransistors

“…In addition, deviations from ideality, such as surface roughness, dangling bonds, and interface states, which affect the performance of devices, can be reduced or eliminated thanks to their layered nature. Graphene [4][5][6] , silicene [7][8][9][10] , silicane [11][12][13][14] , germanene 8,11,15 , phosphorene [16][17][18][19][20] , and monolayer transition metal dichalcogenides (TMD) [21][22][23][24][25] are some of the most extensively studied 2D materials.…”