Electronic transport properties of phenylacetylene molecular junctions

Abstract

Electronic transport properties of phenylacetylene molecular junctions *Liu Wen( ) a) , Cheng Jie( ) a) , Yan Cui-Xia( ) a) , Li Hai-Hong( ) a) , Wang Yong-Juan( ) a) , and Liu De-Sheng( ) a)b) †

Two-dimensional models of threshold voltage and subthreshold current for symmetrical double-material double-gate strained Si MOSFETs

“…In the above equations, (∆E C ) s−Si is the increase value of electron affinity of silicon due to the strain, (∆E g ) s−Si is the decrease value of bandgap of silicon due to the strain, and Z is the strain of Ge mole fraction in the relaxed SiGe butter layer. [14] (ii) The potential and the electric field at the interface of both regions are continuous…”

“…The conventional definition of threshold voltage of MOS-FETs is the gate source voltage at which ϕ S min = 2ϕ F,Si , where ϕ F,Si is the difference between the extrinsic Fermi level in the bulk region and the intrinsic Fermi level. [14] By considering the effect of strain, the threshold condition of the front gate for the present symmetrical DM-DG s-Si MOSFET is modified as [14,15] ϕ S1 min = ϕ th ,…”

Switching properties of bi-OPE-monothiol molecular junctions: Substituent effects and improvement of open-close ratio

“…In the past several decades, nanotechnology and supramolecular chemistry have experienced rapid development and many important and solid advances have been made in areas of the molecular electronic devices, especially for single-molecule devices. [1][2][3][4][5][6][7][8][9][10][11][12] However, research has primarily focused on bimolecular devices in recent years and many challenging problems still remain. [13][14][15][16][17][18][19][20] Recently, Wu et al [13] first prepared bimolecular junctions through π-stacking of adjacent OPE molecules in a mechanically controllable break junction (MCBJ).…”

First-principles study of electronic properties of interfacial atoms in metal-metal contact electrification

“…Band structure, electrostatic potential, conductance, and the I-V characteristics of the interface have been hot topics of research. [13][14][15][16][17] Even so, the intrinsic charge transfer between the materials at the interface was not studied in detail. Even if the charge transfer was considered, it was investigated as a tool to demonstrate or explain the variation of electronic properties, such as the work function, dipole formation, [18,19] and chemical bonding.…”