Electronic transport properties of amorphous and quasicrystals TMxAl100−x alloys

Barzola‐Quiquia, J.; Häußler, P.

doi:10.1016/j.jnoncrysol.2007.05.061

Cited by 3 publications

(2 citation statements)

References 15 publications

(19 reference statements)

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“…The absolute value of the S(T) of the amorphous Bi 2 Te 3 is large in comparison to other amorphous metallic alloys, e.g. they reach a value of S(T = 200 K) < 2µ V K −1 [54], i.e. two orders less than in our investigated sample.…”

Section: Themopower In the Amorphous And Crystalline Phasecontrasting

confidence: 50%

Thermopower and resistivity of the topological insulator Bi₂Te₃ in the amorphous and crystalline phase

Osmic,

Barzola-Quiquia,

Winnerl

et al. 2024

J. Phys.: Condens. Matter

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We have, in-situ, prepared and measured the temperature dependence of thermopower S(T) and resistance R(T) of Bi2Te3 topological insulator (TI) thin films in the amorphous and crystalline phase. Samples were prepared by sequential flash-evaporation at liquid 4He temperature. The S(T) in the amorphous phase is negative and much larger compared to other known amorphous materials, while in the crystalline phase it is also negative and behaves linearly with the temperature. The resistivity ρ(T) in the amorphous phase shows a semiconducting like behavior that changes to a linear metallic behavior after crystallization. S(T) an ρ(T) results in the crystalline phase are in good agreement with results obtained both in bulk and thin films reported in the literature. Linear behavior of the ρ(T) for T > 15K indicates the typical metallic contribution from the surface states as observed in other TI novel materials. The low temperature conductivity T < 10K exhibits logarithmic temperature dependent positive slope κ∼ 0.21, indicating the dominance of electron–electron interaction (EEI) over the quantum interference effect (QIE), with a clear two dimensional nature of the contribution. Raman spectroscopy showed that the sample has crystallized in the trigonal R3m space group. Energy-dispersive X-ray spectroscopy reveales high homogeneity in the concentration and no magnetic impurities introduced during preparation or growth.

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Section: Themopower In the Amorphous And Crystalline Phasecontrasting

confidence: 50%

Thermopower and resistivity of the topological insulator Bi₂Te₃ in the amorphous and crystalline phase

Osmic,

Barzola-Quiquia,

Winnerl

et al. 2024

J. Phys.: Condens. Matter

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“…In a recent study of Al 100−x Mn x alloys, change in the resistivity and thermopower has been explained by using the concept of pseudogap. 22 The substantially higher electrical resistivity of Al 6 Mn at 300 K ͑80 ⍀ cm͒ ͑Ref. 20͒ compared to Al ͑2.7 ⍀ cm͒, 21 could be attributed to the pseudogap in the former.…”

Section: Introductionmentioning

confidence: 99%

Influence ofsp−dhybridization on the electronic structure of Al-Mn alloys

et al. 2008

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The influence of sp-d hybridization on the electronic structure of different Al-Mn alloys has been studied by photoelectron spectroscopy. Experimental evidence of a pseudogap in a crystalline binary Hume-Rothery alloy is provided. The pseudogap varies systematically with Mn concentration. The sp-d hybridization alone, even in the absence of Hume-Rothery mechanism, can produce the pseudogap. Existence of the pseudogap, suppression of the Mn 2p satellite, and decrease in the Doniach-Šunjić asymmetry parameter are the consequences of the sp-d hybridization. An in situ method of preparing these alloys by annealing a Mn adlayer on Al͑111͒ is presented.

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Superconductivity in the amorphous phase of the half-Heusler TiNiSn alloy

Barzola‐Quiquia

Osmic²,

Bercoff³

et al. 2023

Journal of Non-Crystalline Solids

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Electronic transport properties of amorphous and quasicrystals TMxAl100−x alloys

Cited by 3 publications

References 15 publications

Thermopower and resistivity of the topological insulator Bi₂Te₃ in the amorphous and crystalline phase

Thermopower and resistivity of the topological insulator Bi₂Te₃ in the amorphous and crystalline phase

Influence ofsp−dhybridization on the electronic structure of Al-Mn alloys

Superconductivity in the amorphous phase of the half-Heusler TiNiSn alloy

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Electronic transport properties of amorphous and quasicrystals TMxAl100−x alloys

Cited by 3 publications

References 15 publications

Thermopower and resistivity of the topological insulator Bi2Te3 in the amorphous and crystalline phase

Thermopower and resistivity of the topological insulator Bi2Te3 in the amorphous and crystalline phase

Influence ofsp−dhybridization on the electronic structure of Al-Mn alloys

Superconductivity in the amorphous phase of the half-Heusler TiNiSn alloy

Contact Info

Product

Resources

About

Thermopower and resistivity of the topological insulator Bi₂Te₃ in the amorphous and crystalline phase

Thermopower and resistivity of the topological insulator Bi₂Te₃ in the amorphous and crystalline phase