Electronic Transport Properties

Abstract

Results of a thermoelectric power component (S f) and electrical resistivity (ρ f) measurements connected with the temperature unstable intermediate valence of Ce are presented for CeNi, CeNi 2 and CeNi 2 Si 2 compounds in the temperature range 4-800 K. It is shown that dependences S f (T) and ρ f (T) are well described in a wide temperature range within the framework of a simple model of a narrow peak in the density of states g f (E) of Lorentzian shape near the Fermi level. The width of the peak depends on temperature and defines the characteristic single-ion Kondo temperature T K .