Electronic transport in lightly doped<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">CoSb</mml:mi></mml:mrow><mml:mrow><mml:mn>3</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>

Mandrus, David; Migliori, A.; Darling, T. W.; Hundley, M. F.; Peterson, Eric J.; Thompson, J. D.

doi:10.1103/physrevb.52.4926

Cited by 162 publications

(114 citation statements)

References 7 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…From the temperature-dependent Seebeck coefficient measurement, the band gap Eg of various samples can be roughly estimated using the equation = 2 (II), where e is the elementary charge, Smax is the peak Seebeck coefficient, and Tmax is the temperature corresponding to the maximum Sebeck coefficient [16]. Based on this equation the energy gaps of the samples were estimated to be in the range of 0.09-0.29 eV (table 4), which is consistent with the values reported in literature [17]. The temperature dependence of thermal conductivity for the two methods is shown in Figure 6.…”

Section: Preprints (Wwwpreprintsorg) | Not Peer-reviewed | Posted: supporting

confidence: 76%

One-Step Synthesis and Sintering of Skutterudite CoSb3: Smart Houses Materials?

Giannakis¹,

Ioannidou²,

Niarchos³

et al. 2017

Preprint

View full text Add to dashboard Cite

Thermoelectric materials may be used in devices as thermoelectric "air conditioner" in a smart house for improved energy efficiency. Energy harvesting uses ambient energy to generate electricity. It provides potentially low-cost, maintenance-free, long-life equipment by reducing the need for batteries or power chords. Energy harvesting (EH) is also known as power harvesting or energy scavenging. EH is considered to give benefits related to environmental friendliness, safety, security, convenience and affordability. EH can be used for brand enhancing. Technically, it can be used to make new things possible depending on visionary engineering. The variety of thermoelectric (TE) materials that can be used in energy harvesting is quite large, and the optimal material for a given application depends mainly on the temperature range in which the material is to be used. In this work we study the development and characterization of thermoelectric materials which were prepared by two different method, which were: a) ball-milling followed by sintering and b) ball-milling, microwave synthesis, high energy planetary ball milling, and sintering. Finally, we study the thermoelectric properties, calculate the band gaps and the ZT for the thermoelectric materials.

show abstract

Section: Preprints (Wwwpreprintsorg) | Not Peer-reviewed | Posted: supporting

confidence: 76%

One-Step Synthesis and Sintering of Skutterudite CoSb3: Smart Houses Materials?

Giannakis¹,

Ioannidou²,

Niarchos³

et al. 2017

Preprint

View full text Add to dashboard Cite

show abstract

“…For the whole temperature range, resistivity decreases with increase in temperature, which is typical of a semiconductor. The low-temperature semiconducting behavior is similar to what has been previously reported for CoSb 3 single crystals 35 and is attributed to the high quality of the thin films. The semiconducting nature of the films is strikingly in contrast with the degenerate or metallic nature of the target.…”

Section: Low-temperature Electrical Transportsupporting

confidence: 73%

Lattice dynamics and substrate-dependent transport properties of (In, Yb)-doped CoSb3 skutterudite thin films

Kumar

Kyu

Alshareef

2011

Journal of Applied Physics

View full text Add to dashboard Cite

Lattice dynamics, low-temperature electrical transport, and high-temperature thermoelectric properties of (In, Yb)-doped CoSb3 thin films on different substrates are reported. Pulsed laser deposition under optimized conditions yielded single-phase polycrystalline skutterudite films. Raman spectroscopy studies suggested that In and Yb dopants occupy the cage sites in the skutterudite lattice. Low-temperature electrical transport studies revealed the n-type semiconducting nature of the films with extrinsic and intrinsic conduction mechanisms, in sharp contrast to the degenerate nature reported for identical bulk samples. Calculations yielded a direct bandgap close to 50 meV with no evidence of an indirect gap. The carrier concentration of the films was identical to that reported for the bulk and increased with temperature beyond 250 K. The higher resistivity exhibited is attributed to the enhanced grain boundary scattering in films with a high concentration of grains. The maximum power factor of ∼0.68 W m−1 K−1 obtained at 660 K for the film on glass is found to be nearly four times smaller compared to that reported for the bulk. The observed difference in the power factors of the films on different substrates is explained on the basis of the diffusion of oxygen from the substrates and the formation of highly conducting CoSb2 phase upon the oxidation of CoSb3.

show abstract

“…While Bi 2 Te 3 has similar majority and minority carrier weighted mobility, 22,23 other systems such as ZrNiSn, 19 Si, Ge, and others, 24 are believed to have values that exceed two (5 in the case of ZrNiSn). In order to illustrate the effect of an increasing weighted mobility ratio, the g-dependent Seebeck is plotted for ZrNiSn ( g $ 5 at room temperature) 19 in Figure 3(a).…”

Section: Methods Namementioning

confidence: 99%