Electronic Transport in High-Resistivity Cerium Sulfide

Cutler, M.; Leavy, James

doi:10.1103/physrev.133.a1153

Cited by 59 publications

(17 citation statements)

References 24 publications

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“…La 3−x Te 4 has the highest known thermoelectric efficiency ͑n type͒ at high temperatures, zT Ӎ 1.2 at 1300 K. It owes its strong performance to a relatively large Seebeck coefficient and a low-lattice thermal conductivity ͑ l Յ 1 W m −1 K −1 at 300 K͒. 2 Lanthanum telluride and other rare-earth chalcogenides with the Th 3 P 4 structure have been studied over several decades as candidate high-temperature thermoelectrics, [3][4][5][6][7] as well as for their superconducting properties. [8][9][10] Early studies of thermoelectric investigations were summarized by Wood.…”

Section: Introductionmentioning

confidence: 99%

Phonon density of states and heat capacity ofLa3−xTe4

et al. 2009

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The phonon density of states ͑DOS͒ of La 3−x Te 4 compounds ͑x = 0.0, 0.18, 0.32͒ was measured at 300, 520, and 780 K, using inelastic neutron scattering. A significant stiffening of the phonon DOS and a large broadening of features were observed upon introduction of vacancies on La sites ͑increasing x͒. Heat-capacity measurements were performed at temperatures 1.85Յ T Յ 1200 K and were analyzed to quantify the contributions of phonons and electrons. The Debye temperature and the electronic coefficient of heat capacity determined from these measurements are consistent with the neutron-scattering results, and with previously reported first-principles calculations. Our results indicate that La vacancies in La 3−x Te 4 strongly scatter phonons and this source of scattering appears to be independent of temperature. The stiffening of the phonon DOS induced by the introduction of vacancies is explained in terms of the electronic structure and the change in bonding character. The temperature dependence of the phonon DOS is captured satisfactorily by the quasiharmonic approximation.

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Section: Introductionmentioning

confidence: 99%

Phonon density of states and heat capacity ofLa3−xTe4

et al. 2009

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“…Large thermopowers that are linear in the temperature, at least in the metallic regime, were already found in the pioneering extensive work on Cerium sulfide compounds by Cutler and Leavy, 12 and analyzed by Cutler and Mott. 10 It is interesting to address specifically the behavior around the localization transition.…”

Section: Brief Discussion Of Experimentsmentioning

confidence: 71%

“…Measuring all energies from the chemical potential µ and scaling them with T , we rewrite Eq. (12) in the manner (we shall employ units in which the Boltzmann constant, k B is unity, and insert it in the final results)…”

Section: The Conductivity At Finite Temperaturesmentioning

confidence: 99%

The Localization Transition at Finite Temperatures: Electric and Thermal Transport

Imry

Amir

2010

Int. J. Mod. Phys. B

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The Anderson localization transition is considered at finite temperatures. This includes the electrical conductivity as well as the electronic thermal conductivity and the thermoelectric coefficients. An interesting critical behavior of the latter is found. A method for characterizing the conductivity critical exponent, an important signature of the transition, using the conductivity and thermopower measurements, is outlined.

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“…In the case of metallic and semiconductive nanotubes, the derivative d(DOS(E F ))/dE F is equal to zero or non-equal, respectively [24] . In the case of the metallic or degenerate semiconductor behavior of the CNTs, the following expression may be more relevant [4] , [15] , [25] : where n and m * are the carrier concentration and the effective mass of the carriers, respectively. It means that metallic behavior of the investigated CNT composite observed in Seebeck coefficient (α)-temperature relationship shown in Fig.…”

Section: Resultsmentioning

confidence: 99%

Temperature Gradient Measurements by Using Thermoelectric Effect in CNTs-Silicone Adhesive Composite

et al. 2014

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This work presents the fabrication and investigation of thermoelectric cells based on composite of carbon nanotubes (CNT) and silicone adhesive. The composite contains CNT and silicon adhesive 1∶1 by weight. The current-voltage characteristics and dependences of voltage, current and Seebeck coefficient on the temperature gradient of cell were studied. It was observed that with increase in temperature gradient the open circuit voltage, short circuit current and the Seebeck coefficient of the cells increase. Approximately 7 times increase in temperature gradient increases the open circuit voltage and short circuit current up to 40 and 5 times, respectively. The simulation of experimental results is also carried out; the simulated results are well matched with experimental results.

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Electronic Transport in High-Resistivity Cerium Sulfide

Cited by 59 publications

References 24 publications

Phonon density of states and heat capacity ofLa3−xTe4

Phonon density of states and heat capacity ofLa3−xTe4

The Localization Transition at Finite Temperatures: Electric and Thermal Transport

Temperature Gradient Measurements by Using Thermoelectric Effect in CNTs-Silicone Adhesive Composite

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