Electronic Transport in a Controllably Grown Carbon Nanotube-Silicon Heterojunction Array

Tzolov, Marian; Chang, B. H.; Yin, Aijun; Straus, Daniel S.; Xu, Jimmy; Brown, Gail J.

doi:10.1103/physrevlett.92.075505

Cited by 67 publications

(67 citation statements)

References 8 publications

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“…In addition, we iv) calculate the nonlinear field dependence of the conductivity, which is characterized by a novel power law exponent. Our theoretical predictions for weak disorder are in reach of present experimental technology, for instance in carbon nanotubes [16,17,18] and polydiacetylen [19], where the influence of strong disorder has already been observed. Especially promising experimental systems are bent 2d electron systems in a strong magnetic field [20] or quantum Hall line junctions [21], in which both interaction and disorder strength can be tuned.…”

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confidence: 53%

Frequency-temperature crossover in the conductivity of disordered Luttinger liquids

2007

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The temperature (T ) and frequency (ω) dependent conductivity of weakly disordered Luttinger liquids is calculated in a systematic way both by perturbation theory and from a finite temperature renormalization group (RG) treatment to leading order in the disorder strength. Whereas perturbation theory results in ω/T scaling of the conductivity such scaling is violated in the RG traetment. We also determine the non-linear field dependence of the conductivity, whose power law scaling is different from that of temperature and frequency dependence. Interacting one-dimensional electron systems display a large variety of unusual and interesting phenomena, since not only interactions but also external potentials (periodic or random) and thermal fluctuations have pronounced effects on the behavior of these systems [1,2]. The hallmark of interaction effects in 1d systems is the power law single particle density of states observable in the backscattering from a single impurity in a Luttinger liquid (LL) [3]. While the LL spectral function has been observed experimentally [4], the rich behavior of collective scattering by random impurities has eluded experimental observation so far.In this letter, we focus on the effect of many weak (Gaussian) impurities in a 1d disordered system. For noninteracting electrons, this problem can be solved exactly [5]. Interaction effects are mostly treated perturbatively and described by a dephasing length, which cuts off interference corrections. While this regime of weak interactions has been studied thoroughly [6,7], less is known about the opposite regime of strong interactions. For attractive interactions, an unpinning transition as a function of the interaction strength was found [8,9,10]. In addition, the power law exponent describing the energy dependence of impurity scattering was predicted to flow as a function of energy [9]. Finite temperature effects were partially incorporated by truncating the renormalization group (RG) flow at the de Broglie wave length of plasmon excitations [9]. However, for a complete study of the thermal to quantum crossover, quantum and thermal fluctuations have to be considered on an equal footing [11].We calculate the frequency, temperature, and electric field dependence of the conductivity for spinless 1d fermions to leading order in the disorder strength but for arbitrary short range interactions. We go beyond previous approaches [8,9,10,12] in several respects. From a technical point of view, we i) present a systematic approach to calculate the conductivity from a bosonic self energy in the spirit of [13], both in perturbation theory and from a finite temperature renormalization group [14,15]. This approach can be generalized to higher orders in the impurity strength to obtain weak localization corrections. We ii) explain that due to a symmetry property of the self energy, an imaginary time RG [9,14] has a ballistic density propagator although the retarded density propagator is diffusive. From a physics point of view, we iii) present results for the fr...

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confidence: 53%

Frequency-temperature crossover in the conductivity of disordered Luttinger liquids

2007

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“…Indeed there is a number of recent experiments on carbon nanotubes [16][17][18] and polydiacetylen 19 which seem to confirm the variable range hopping prediction for the dc-conductivity made in 10,11 .…”

Section: Introductionmentioning

confidence: 64%

Nonlinear ac conductivity of interacting one-dimensional electron systems

Rosenow

Nattermann

2006

Phys. Rev. B

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We consider low energy charge transport in one-dimensional (1d) electron systems with short range interactions under the influence of a random potential. Combining RG and instanton methods, we calculate the nonlinear ac conductivity and discuss the crossover between the nonanalytic field dependence of the electric current at zero frequency and the linear ac conductivity at small electric fields and finite frequency.

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“…It could be seen that the CNT (10,10) is an armchair nanotube and CNT (17,0) is a zigzag nanotube. The diameter of both carbon nanotube are 1.356 nm for CNT (10,10) and 1.331 for CNT (17,0). The length of the 50 cells individual nanotubes was obtained of 12.47 nm for CNT (10,10) and 21.60 nm for CNT (17,0).…”

Section: Calculation Results and Discussionmentioning

confidence: 99%

“…The nature of each energy dispersion relation of carbon nanotube has no more than two roots for each level in a Brillouin Zone; therefore, the Two-way Newton-Rhapson method is sufficient. The Dirac Delta itself will determine which differentiation of wave number, in respect with its energy, is taking account into the calculation since The differentiation of the wave number in respect with the energy could be obtained as one over the differentiation of the energy in respect with the wave number, namely 2 (17,0). From both figures of individual carbon nanotube energy dispersion relation, it could be observed that there are van Hove Singularities in the Density of States.…”

Section: Calculation Results and Discussionmentioning

confidence: 99%

“…CNT has prospect to be developed as Schottkybarrier diode. In recent years, most studies investigated the presence of Schottky-barrier effect in structures which connects semiconducting CNT with various kinds of metal [12]- [16] or metal CNT with Silicon as the semiconductor [17]. However, there are only few study about Schottky barrier in metal-semiconductor heterojunction which fully-built from CNT.…”

Section: Introductionmentioning

confidence: 99%

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Electronic Transport Parameter of Carbon Nanotube Metal-Semiconductor On-Tube Heterojunction

2009

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Abstract. Carbon Nanotubes research is one of the top five hot research topics in physics since 2006 because of its unique properties and functionalities, which leads to wide-range applications. One of the most interesting potential applications is in term of nanoelectronic device. Carbon nanotubes heterojunction has been modeled, which was built from two different carbon nanotubes, that one is metallic and the other one is semiconducting. There are two different carbon nanotubes metal-semiconductor heterojunction. The first one is built from CNT(10,10) as metallic carbon nanotube and CNT (17,0) as semiconductor carbon nanotube. The other one is built from CNT (5,5) as metallic carbon nanotube and CNT (8,0). All of the semiconducting carbon nanotubes are assumed to be a pyridine-like N-doped. Those two heterojunctions are different in term of their structural shape and diameter. It has been calculated their charge distribution and potential profile, which would be useful for the simulation of their electronic transport properties. The calculations are performed by using self-consistent method to solve Non-Homogeneous Poisson' s Equation with aid of Universal Density of States calculation method for Carbon Nanotubes. The calculations are done by varying the doping fraction of the semiconductor carbon nanotubes The electron tunneling transmission coefficient, for low energy region, also has been calculated by using WentzelKramer-Brillouin (WKB) approximation. From the calculation results, it is obtained that the charge distribution as well as the potential profile of this device is doping fraction dependent.

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Electronic Transport in a Controllably Grown Carbon Nanotube-Silicon Heterojunction Array

Cited by 67 publications

References 8 publications

Frequency-temperature crossover in the conductivity of disordered Luttinger liquids

Frequency-temperature crossover in the conductivity of disordered Luttinger liquids

Nonlinear ac conductivity of interacting one-dimensional electron systems

Electronic Transport Parameter of Carbon Nanotube Metal-Semiconductor On-Tube Heterojunction

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