2022
DOI: 10.1002/aelm.202100972
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Electronic Transport in 2D‐Based Printed FETs from a Multiscale Perspective

Abstract: As 2D materials (2DMs) gain the research limelight as a technological option for obtaining on‐demand printed low‐cost integrated circuits with reduced environmental impact, theoretical methods able to provide the necessary fabrication guidelines acquire fundamental importance. Here, a multiscale modeling technique is exploited to study electronic transport in devices consisting of a printed 2DM network of flakes. The approach implements a Monte Carlo scheme to generate the flake distribution. By means of ab in… Show more

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Cited by 7 publications
(18 citation statements)
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References 38 publications
(87 reference statements)
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“…The current flows between source and drain metal contacts through the MoS 2 network-based channel region. The device structure is simulated using the multiscale simulation approach reported in [23], which consists of three main ingredients: 1) generation of a random distribution of flakes; 2) definition of the out-of-plane mobility; and 3) solution of transport through a drift-diffusion approximation. The first ingredient consists in generating a random distribution of flakes, with the possibility of arbitrarily setting the orientation, dimension, and overlap between flakes, using a Monte Carlo method [see Fig.…”
Section: Device Structure and Simulation Approachmentioning
confidence: 99%
See 3 more Smart Citations
“…The current flows between source and drain metal contacts through the MoS 2 network-based channel region. The device structure is simulated using the multiscale simulation approach reported in [23], which consists of three main ingredients: 1) generation of a random distribution of flakes; 2) definition of the out-of-plane mobility; and 3) solution of transport through a drift-diffusion approximation. The first ingredient consists in generating a random distribution of flakes, with the possibility of arbitrarily setting the orientation, dimension, and overlap between flakes, using a Monte Carlo method [see Fig.…”
Section: Device Structure and Simulation Approachmentioning
confidence: 99%
“…For this, we model the out-of-plane-to-in-plane conductance ratio by means of density functional theory (DFT) calculations, as presented in Figs. 2 and 3, and the Wannierization of the structure [26], which is used to perform transmission calculations within the nonequilibrium Green's function (NEGF) formalism implemented in the NanoTCAD ViDES software [23], [27]. This procedure is used to define the out-of-plane mobility, which is finally exploited, as the last ingredient, to solve the 3-D drift-diffusion equation selfconsistently with the Poisson equation to calculate the current through the device (more details on the general framework of the method used can be found in [23]).…”
Section: Device Structure and Simulation Approachmentioning
confidence: 99%
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“…The fillers used in inks can provide the desired functionalities for the end products. For energy storage devices, a variety of nanomaterials have been adopted as fillers, such as 2D nanosheets, 56 1D nanowires 57 and 0D nanoparticles 58 . For most inks used for printing energy storage devices, the concentration of the filler can play an important role in the rheology of the ink, the printed pattern structure and the functionalities of the final product.…”
Section: Basic Aspects Of Printable Inkmentioning
confidence: 99%