Electronic transport and dynamics in correlated heterostructures

Mazza, Giacomo; Amaricci, A.; Capone, Massimo; Fabrizio, Michele

doi:10.1103/physrevb.91.195124

Cited by 31 publications

(26 citation statements)

References 56 publications

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“…perpendicularly to the slab axis. Indeed, in the linear response regime we do not expect any prominent effect caused by a finite current flow [24] that could alter completely the physics with respect to the open circuit case.…”

Section: Europe Pmc Funders Author Manuscriptsmentioning

confidence: 83%

“…Nonetheless a true microscopic description in model Mott insulators is still lacking. Indeed, theoretical studies within the single-band Hubbard model, the paradigm of strongly correlated systems, have so far highlighted a breakdown that is essentially due to the tunnelling across the Mott gap, as if the latter were as rigid as the band gap in semiconductors [20][21][22][23][24]. Even if in some cases the tunnelling breakdown can be anticipated by the formation at large fields of in-gap states due to the Wannier-Stark effect [25][26][27], still the agreement with the above experiments remains poor.…”

Section: Introductionmentioning

confidence: 99%

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Field-Driven Mott Gap Collapse and Resistive Switch in Correlated Insulators

et al. 2016

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Mott insulators are "unsuccessful metals" in which Coulomb repulsion prevents charge conduction despite a metal-like concentration of conduction electrons. The possibility to unlock the frozen carriers with an electric field offers tantalizing prospects of realizing new Mott-based microelectronic devices. Here we unveil how such unlocking happens in a simple model that shows coexistence of a stable Mott insulator and a metastable metal. Considering a slab subject to a linear potential drop we find, by means of Dynamical Mean-Field Theory that the electric breakdown of the Mott insulator occurs via a first-order insulator-to-metal transition characterized by an abrupt gap-collapse in sharp contrast to the standard Zener breakdown. The switch-on of conduction is due to the field-driven stabilization of the metastable metallic phase. Outside the region of insulator-metal coexistence, the electric breakdown occurs through a more conventional quantum tunneling across the Hubbard bands tilted by the field. Our findings rationalize recent experimental observations and may offer a guideline for future technological research.

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Section: Europe Pmc Funders Author Manuscriptsmentioning

confidence: 83%

Section: Introductionmentioning

confidence: 99%

Field-Driven Mott Gap Collapse and Resistive Switch in Correlated Insulators

et al. 2016

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“…Moreover, with three terminals one can separate the currents, with charge and heat flowing to different reservoirs. As a result, it is possible to violate in a controlled fashion the Wiedemann-Franz law, greatly enhancing thermoelectric performances [97]. 22 Maximum efficiencyη max (left panel) and efficiency at maximum powerη(P max ) (right panel), both in units of η C .…”

Section: Inelastic Scattering and Probe Terminalsmentioning

confidence: 99%

From Thermal Rectifiers to Thermoelectric Devices

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Mejía‐Monasterio

et al. 2016

Thermal Transport in Low Dimensions

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We discuss thermal rectification and thermoelectric energy conversion from the perspective of nonequilibrium statistical mechanics and dynamical systems theory. After preliminary considerations on the dynamical foundations of the phenomenological Fourier law in classical and quantum mechanics, we illustrate ways to control the phononic heat flow and design thermal diodes. Finally, we consider the coupled transport of heat and charge and discuss several general mechanisms for optimizing the figure of merit of thermoelectric efficiency.

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“…Refs. 34,35,[45][46][47][48][75][76][77][78][80][81][82][83][84][85] ). Here, we approximate the effects of the LRCI, by introducing a linear behavior of the onsite energies (homogeneous electric field) in the central region as ε z = ε (0) z + µ l − zΦ/(L + 1).…”

Section: Modelmentioning

confidence: 99%

Resonance effects in correlated multilayer heterostructures

et al. 2016

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We study the occurrence of negative differential conductance induced by resonance effects in a model for a multilayer heterostructure. In particular, we consider a system consisting of several correlated and non-correlated monoatomic layers, sandwiched between two metallic leads. The geometry confines electrons in wells within the heterostructures, which are connected to each other and to the leads by tunneling processes. The non-equilibrium situation is produced by applying a bias-voltage to the leads. Our results show that for specific values of the parameters resonance tunneling takes place. We investigate in detail its influence on the current-voltage characteristics. Our results are obtained via non-equilibrium real-space dynamical mean-field theory. As an impurity solver we use the so-called auxiliary master equation approach, which addresses the impurity problem within an auxiliary system consisting of a correlated impurity, a small number of uncorrelated bath sites, and two Markovian environments described by a generalized master equation.

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Electronic transport and dynamics in correlated heterostructures

Cited by 31 publications

References 56 publications

Field-Driven Mott Gap Collapse and Resistive Switch in Correlated Insulators

Field-Driven Mott Gap Collapse and Resistive Switch in Correlated Insulators

From Thermal Rectifiers to Thermoelectric Devices

Resonance effects in correlated multilayer heterostructures

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