Electronic thermal spike effects in intermixing of bilayers induced by swift heavy ions

Wang, Z.G.; Dufour, C.; Euphrasie, Sébastien; Toulemonde, M.

doi:10.1016/s0168-583x(02)02028-1

Cited by 59 publications

(29 citation statements)

References 15 publications

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“…It may be noted that the increase in temperature in localised region around the ion path in Si is smaller than that in Fe as predicted by thermal spike model. Such a possibility is shown theoretically 32 in Ni/Ti bilayer system, in agreement with experimental results.…”

Section: Ion Beam Mixingsupporting

confidence: 87%

“…However it was observed that the IBM takes place, even if, the S e threshold is overcome in one of the two materials at the interface like in Fe/Si, where it is known that track creation does not take place in Si, even by GeV energy of monoatomic ion and the track creation occurs in the Fe beyond certain threshold of Se. IBM in such a case is explained 32 on the basis that although bulk Si does not go to molten state, still a thin layer of Si at the interface melts transiently because its melting point is lower than that of Fe and the thermal energy transfer takes place from the Fe layer to adjacent Si, which is at lower temperature. This is shown by a schematic in Fig.…”

Section: Ion Beam Mixingmentioning

confidence: 99%

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Modification and Characterisation of Materials by Swift Heavy Ions

Avasthi¹

2009

DSJ

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Swift heavy ions (SHI) available with 15 million Volt Pelletron accelerator at Inter University Accelerator Centre (IUAC) Delhi, formerly known as Nuclear Science Centre, (NSC), provide a unique opportunity to researchers for accelerator based materials science research. The major research areas can be broadly categorised as electronic sputtering, interface modifications, synthesis and modification of nanostructures, phase transitions and ion beam-induced epitaxial crystallisation. In, general, SHI irradiation based-materials may not be economically feasible, still it could be of interest for very specific cases in defence and space research. The paper gives a glimpse of the current research activities in materials science with SHIs, at IUAC.Keywords: Swift heavy ions, SHI, materials science, materials research systhesis of materials, characterisation of materials, nuclear energy loss, ion energy loss, electronic energy-loss-defects in materials, defect engineering INTRODUCTIONThe ions with energy ranging from a fraction of keV to GeV are useful in synthesis, modification and characterization of materials. The energetic ions during their passage through a material loose energy via two processes. These are nuclear energy loss S n and electronic energy loss S e . In the former process, the energy is lost by elastic collisions of incident ions with the atoms in the material, which is dominant at low energies. In the electronic energy loss process, dominant at high energies (>1 MeV/nucleon), the energy is lost by inelastic collisions of the ion with the atoms, leading to excitation or ionisation of the atoms. At these energies of heavy ions, the velocity of the ion is comparable to or higher than the velocity of Bohr electron. The ions with such high energies are also referred to as Swift Heavy Ions (SHI). The electronic energy loss for SHI is, generally, about two orders of magnitude higher than the nuclear energy loss1 . An interesting characteristic of the SHI is that it creates a columnar type of defect along its path (called as ion track), specially, in insulators. SHI during its passage through material can cause defect annealing, cluster of point defects and columnar type of defects depending on the mass and energy of the ion and the material. Therefore the SHI can be used for engineering the defects in the materials. The parameters of ion beam, which play crucial role in defect engineering, are the energy deposited per unit length and the fluence.The ion mass and its energy, decide the magnitudes of the electronic as well as nuclear energy losses. Especially for heavy ions at high energies (i.e., for SHI), the electronic energy loss decides the type of defects as the nuclear energy loss. The other ion beam parameter, fluence, dictates the number of defects (produced). The number of ion

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Section: Ion Beam Mixingsupporting

confidence: 87%

Section: Ion Beam Mixingmentioning

confidence: 99%

Modification and Characterisation of Materials by Swift Heavy Ions

Avasthi¹

2009

DSJ

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“…This causes an increment in the lattice temperature that can exceed the melting temperature. Therefore, if one of the components is sensitive to the electronic energy loss, the melting phase will appear at the interface of bi-layers system and the mixing between two different materials could occur due to the high diffusivity of components in a liquid phase [48][49][50]. Consequently, one can suppose that intermixing could be attributed to interdiffusion in the molten ion track, provided that, at least one of the components is sensitive to S e deposition.…”

Section: Mixing With Metallic Materialsmentioning

confidence: 99%

Behavior of crystalline silicon under huge electronic excitations: A transient thermal spike description

Chettah

Kucal

Wang

et al. 2009

Nuclear Instruments and Methods in Physics Research Section B:

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“…Similarly, S n is estimated to be 1.04 keV/nm for W and 0.6 keV/nm for Fe [33]. The effective mechanism of electronic energy loss in metals is through the thermal spike [22,[34][35][36]. Recently Gupta et al [37] have reported computer simulation of temperature rise of a thermal spike generated with 120 MeV Au 9 + ions in bulk Fe.…”

Section: Discussionmentioning

confidence: 99%