2015
DOI: 10.1016/j.jpcs.2015.05.021
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Electronic structures and thermoelectric properties of La or Ce-doped Bi2Te3 alloys from first principles calculations

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Cited by 12 publications
(5 citation statements)
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References 46 publications
(63 reference statements)
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“…As a result, an indirect band gap is formed with a conduction band edge along the L–Z direction and a valence band edge along the Z–Γ direction. These results are consistent with previous calculations . Careful analysis of the result of calculations compared to available experimental data (Table and Figure ) suggests that the GGA‐PBEsol functional provides the most adequate description of both electronic structure and bulk properties of Bi 2 Te 3 .…”
Section: Computational Resultssupporting
confidence: 90%
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“…As a result, an indirect band gap is formed with a conduction band edge along the L–Z direction and a valence band edge along the Z–Γ direction. These results are consistent with previous calculations . Careful analysis of the result of calculations compared to available experimental data (Table and Figure ) suggests that the GGA‐PBEsol functional provides the most adequate description of both electronic structure and bulk properties of Bi 2 Te 3 .…”
Section: Computational Resultssupporting
confidence: 90%
“…The same trend is observed for the calculated band structures. Whereas GGA‐rPBE and GGA‐BLYP functionals result in completely non‐physical band structure (Figure b,f), contradicting all available literature data, the other ones demonstrate reasonable E (truek) dependences with realistic band gap ( E g ) values (Figure , Table ) close to the experimentally established E g = 0.13–0.16 . Emphasis should be put on the influence SOC on band structure and bulk properties of Bi 2 Te 3 .…”
Section: Computational Resultsmentioning
confidence: 49%
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“…11 In addition to the new preparation methods, elements doping was also an effective way to improve TE performance of n-type Bi 2 Te 3 -based alloys. Among many dopants for n-type Bi 2 Te 3 -based alloys, rare earth elements were regarded as the most important dopants for achieving high ZT values, [12][13][14] so it was very important to understand the effect of rare earth elements on the crystal structure and TE properties of n-type Bi 2 Te 3 -based materials. However, n-type Bi 2 Te 3 -based alloys doped with rare earth elements prepared by HPS are seldom reported.…”
Section: Introductionmentioning
confidence: 99%
“…[4][5][6] Furthermore, a number of papers present the results of the study of interactions of the rare-earth elements with heavy elements chalcogenides. [7][8][9] Tl 5 Te 3 compound crystallizes in tetragonal structure (Sp.gr.I4/mcm, a = 8.930; c = 12.598 Å), 10,11 and has a number of ternary substitutional analogs of Tl 4 A IV Te 3 and Tl 9 B V Te 6 -type (A IV -Sn, Pb; B V -Sb, Bi), [12][13][14] which also possess a good thermoelectric performance. 15,16 Moreover, authors 17 A new thallium lanthanide tellurides of Tl 9 LnTe 6 -type (Ln-Ce, Nd, Sm, Gd, Tb, Tm) were found to be a new structural analog of Tl 5 Te 3 .…”
Section: Introductionmentioning
confidence: 99%