Electronic Structures and Optical Properties of(GaP)_n(AlP)_nShort-Period Superlattices withn=1to 6

Linear and second-order optical response of III-V monolayer superlattices

“…43 The pseudopotential method within the local density approximation (LDA) has been used by Kobayashi et al 44 to calculate the optical transition strengths of the (AlP) n /(GaP) m type multi-quantum-well SLs and for GaAs/AlAs by Yee et al 45 Confinement effects on optical transitions for various superlattice periods in GaAs/AlAs has been discussed by Schmid et al 46 The sp 3 s * tight-binding method has been used for the study of optical properties and the indirect-to-direct band gap transition of AlP/GaP 47,48 and GaAs/AlAs SLs. 49 Botti et al 50 have employed the linear combination of bulk bands method to determine the optical properties of GaAs/AlAs SLs and electroabsorption properties of these SLs have been studied by Kawashima et al 51 Shibata et al 52 used the pseudopotential method to determine the oscillator strength and band structures of the AlP/GaP SLs.…”

Structural and electronic properties of bulk GaP and AlP and their superlattices

“…We found that a 2,2 is about twice a 1,1 , and a 3,3 is about three fold a 1,1 , whereas the bulk modulus and the pressure derivative are almost the same for different values of n. for n = 1, 3 [48] in the matter of the valence band and conduction band configuration, except for superlattices confirm the indirect gap nature for only n = 1 and 2 and the direct band gap behavior occurs when n is greater or equal to three (n ≥ 3) [45,47,68,69].…”