Electronic structures and magnetic properties in Cu-doped two-dimensional dichalcogenides

Hu, Anzi; Wang, Lingling; Xiao, Wen-Zhi; Meng, Bo

doi:10.1016/j.physe.2015.04.029

Cited by 35 publications

(16 citation statements)

References 36 publications

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“…The strong hybridisation of the 3 d orbitals of Cu with the p orbitals of S atoms enabled spin splitting near the Fermi level and the consequent development of magnetic properties. On the contrary, in the case of MoTe 2 and WS 2 monolayers, Cu doping was not predicted to yield a magnetic material . Ferromagnetism could be obtained in calculations for Cu‐doped WS 2 bi‐layers, however, with a total magnetic moment of about 1 µ B , significantly lower than that in the case of MoS 2 …”

Section: Transition Metal Dichalcogenides (Tmds)mentioning

confidence: 89%

“…Copper doping of various TMDs has also been computationally studied recently. For MoS 2 and MoSe 2 even a single Cu dopant atom gave a surprisingly high total magnetic moment of about 5 µ B , higher than any of the other first‐row transition metals . The strong hybridisation of the 3 d orbitals of Cu with the p orbitals of S atoms enabled spin splitting near the Fermi level and the consequent development of magnetic properties.…”

Section: Transition Metal Dichalcogenides (Tmds)mentioning

confidence: 99%

See 1 more Smart Citation

Electron Spin Dynamics of Two‐Dimensional Layered Materials

Náfrádi

Choucair

Forró

2016

Adv Funct Materials

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The growing library of two-dimensional layered materials is providing researchers with a wealth of opportunity to explore and tune physical phenomena at the nanoscale. Here, we review the experimental and theoretical state-of-art concerning the electron spin dynamics in graphene, silicene, phosphorene, transition metal dichalcogenides, covalent heterostructures of organic molecules and topological materials. The spin transport, chemical and defect induced magnetic moments, and the effect of spin-orbit coupling and spin relaxation, are also discussed in relation to the field of spintronics.

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Section: Transition Metal Dichalcogenides (Tmds)mentioning

confidence: 89%

Section: Transition Metal Dichalcogenides (Tmds)mentioning

confidence: 99%

Electron Spin Dynamics of Two‐Dimensional Layered Materials

Náfrádi

Choucair

Forró

2016

Adv Funct Materials

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show abstract

“…To date, high level (> 10%) Cu and Co doping was achieved for WS2 by CVT [75] and for MoS2 by CVD, respectively [76]. DFT calculations show that Cu impurity states span over a range of ~ 1 eV in the band gap of WS2 [77]. For Co-doped MoS2, the impurity states also span over a similarly wide range, but their average energy is closer to the CBM.…”

Section: N-type Dopingmentioning

confidence: 99%

Substitutional doping in 2D transition metal dichalcogenides

et al. 2020

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Two-dimensional (2D) van der Waals transition metal dichalcogenides (TMDs) are a new class of electronic materials offering tremendous opportunities for advanced technologies and fundamental studies. Similar to conventional semiconductors, substitutional doping is key to tailoring their electronic properties and enabling their device applications. Here, we review recent progress in doping methods and understanding of doping effects in group 6 TMDs (MX 2 , M = Mo, W; X = S, Se, Te), which are the most widely studied model 2D semiconductor system. Experimental and theoretical studies have shown that a number of different elements can substitute either M or X atoms in these materials and act as n-or p-type dopants. This review will survey the impact of substitutional doping on the electrical and optical properties of these materials, discuss open questions, and provide an outlook for further studies.

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“…However, there are very limited, and mostly theoretical studies on intrinsic magnetism based on monolayer structure calculation 17 – 20 . Theoretical and experimental work shows that in the absence of crystalline imperfections, the Mo-based TMDs are nonmagnetic 21 – 23 . Therefore, by adding defects one may induce magnetism into these materials and this ability can open up a host of new opportunities for spintronic applications.…”

Section: Introductionmentioning

confidence: 99%

Defect induced ferromagnetic ordering and room temperature negative magnetoresistance in MoTeP

Pal

Kumar

Shahi

et al. 2021

Sci Rep

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The magneto-transport, magnetization and theoretical electronic-structure have been investigated on type-II Weyl semimetallic MoTeP. The ferromagnetic ordering is observed in the studied sample and it has been shown that the observed magnetic ordering is due to the defect states. It has also been demonstrated that the presence of ferromagnetic ordering in effect suppresses the magnetoresistance (MR) significantly. Interestingly, a change-over from positive to negative MR is observed at higher temperature which has been attributed to the dominance of spin scattering suppression.

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Electronic structures and magnetic properties in Cu-doped two-dimensional dichalcogenides

Cited by 35 publications

References 36 publications

Electron Spin Dynamics of Two‐Dimensional Layered Materials

Electron Spin Dynamics of Two‐Dimensional Layered Materials

Substitutional doping in 2D transition metal dichalcogenides

Defect induced ferromagnetic ordering and room temperature negative magnetoresistance in MoTeP

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