2015
DOI: 10.1103/physrevb.92.045206
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Electronic structure, transport, and phonons ofSrAgChF(Ch = S, Se, Te): Bulk superlattice thermoelectrics

Abstract: We report calculations of the electronic structure, vibrational properties and transport for the p-type semiconductors, SrAgChF (Ch=S, Se and Te). We find soft phonons with low frequency optical branches intersecting the acoustic modes below 50 cm −1 , indicative of a material with low thermal conductivity. The bands at and near the valence band maxima are highly two dimensional, which leads to high thermopowers even at high carrier concentrations, which is a combination that suggests good thermoelectric perfo… Show more

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Cited by 38 publications
(3 citation statements)
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“…The maximum amplitude of acoustic frequency is ~100 cm -1 , in good agreement with 120 cm -1 of HfNiPb [52]. The mixing between the acoustic and the optical branches gives a considerable phonon-phonon scattering, which results in low thermal conductivity of the compound [53]. found to be 9.9 W/mK.…”
Section: Phonon Propertiessupporting
confidence: 71%
See 1 more Smart Citation
“…The maximum amplitude of acoustic frequency is ~100 cm -1 , in good agreement with 120 cm -1 of HfNiPb [52]. The mixing between the acoustic and the optical branches gives a considerable phonon-phonon scattering, which results in low thermal conductivity of the compound [53]. found to be 9.9 W/mK.…”
Section: Phonon Propertiessupporting
confidence: 71%
“…HfNiPb [52]. The mixing between the acoustic and the optical branches gives a considerable phonon-phonon scattering, which results in low thermal conductivity of the compound [53].…”
Section: Phonon Propertiesmentioning
confidence: 99%
“…Since the Seebeck coefficient S represents the average entropy of electrical carriers [ 37 ], band engineering by properly manipulating the density of states (DOS) of carriers (electrons, holes, and small polarons, et al, depends on materials) that is responsible for electrical current could significantly enhance the Seebeck coefficient. It is straightforward to utilize the low-dimensional structures such as superlattices [ 35 , 38 ], nanowires [ 39 , 40 ], and quantum wells [ 41 , 42 ] to control DOS. DOS distortions induced by introducing resonant energy levels through doping [ 43 ] and convergence of many valleys by tuning the doping and composition [ 16 ] in bulk materials are newly proposed ways to engineer the DOS for high TE efficiency.…”
Section: Introduction To Thermoelectricitymentioning
confidence: 99%