2016
DOI: 10.1016/j.polymdegradstab.2016.02.016
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Electronic structure of UV degradation defects in polysilanes studied by Energy Resolved – Electrochemical Impedance Spectroscopy

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Cited by 15 publications
(13 citation statements)
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“…As a complementary measurement of the effect of β-phase on the hole DOS, we use a sensitive spectroscopic method for DOS mapping in organic semiconductors, namely, energy-resolved electrochemical impedance spectroscopy (ER-EIS) [81,82]. This method has previously been applied to the determination of HOMO and LUMO positions, electronic bandgap, and characteristic energy of the HOMO band tail, as well as to the characterization of defect state evolution in the bandgap of poly(3-hexylthiophene) (P3HT) induced upon degradation in air [83] or by varying layer thickness [84], and defect states in poly (silylene) materials induced by ultraviolet-light degradation [85]. Recently, the ER-EIS method, along with structural information, was used to characterize the energetic position and density of midgap trap states of the PbS nanocrystal thin film [86].…”
Section: B Thin-film Dos Mapping Using Energy-resolved Electrochemicmentioning
confidence: 99%
“…As a complementary measurement of the effect of β-phase on the hole DOS, we use a sensitive spectroscopic method for DOS mapping in organic semiconductors, namely, energy-resolved electrochemical impedance spectroscopy (ER-EIS) [81,82]. This method has previously been applied to the determination of HOMO and LUMO positions, electronic bandgap, and characteristic energy of the HOMO band tail, as well as to the characterization of defect state evolution in the bandgap of poly(3-hexylthiophene) (P3HT) induced upon degradation in air [83] or by varying layer thickness [84], and defect states in poly (silylene) materials induced by ultraviolet-light degradation [85]. Recently, the ER-EIS method, along with structural information, was used to characterize the energetic position and density of midgap trap states of the PbS nanocrystal thin film [86].…”
Section: B Thin-film Dos Mapping Using Energy-resolved Electrochemicmentioning
confidence: 99%
“…These branching state generation rates characterize the rate of UV degradation of the band electronic structure. 29,30 It can be seen that the shorter UV wavelength stimulates a faster UV degradation regardless the previous sample treatment while the thermally annealed sample is more resistant to the UV degradation at the longer UV wavelength.…”
Section: © 2017 Author(s) All Article Content Except Where Otherwismentioning
confidence: 99%
“…27,28 The ER-EIS method was used for elucidation of the quantum efficiency of the deep branching state formation in PMPSi after UV degradation. 29,30 The PMPSi is archetypal polymer ideally suited for such a study because its electronic properties strongly depend on the backbone conformation. A strong effect of conformation on the microphysical properties and UV degradation of PMPSi was reported.…”
Section: © 2017 Author(s) All Article Content Except Where Otherwismentioning
confidence: 99%
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