Electronic structure of the Si(001) surface with Pb adsorbates

Tono, Kensuke; Yeom, Han Woong; Matsuda, Ichiro; Ohta, Toshiaki

doi:10.1103/physrevb.61.15866

Cited by 12 publications

(10 citation statements)

References 40 publications

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“…During the deposition, successive structure transformation from initial Si(001)2×1 to streaky Si(001)2×3-Pb at 0.35 ML, Si(001)c(8×4)-Pb at 0.75 ML and Si(001)2×1-Pb at 1 ML was observed by RHEED (see Fig. 1(a)-(d)) as reported by several groups [4][5][6][7]. Si(001)c(8×4)-Pb at 0.75 ML did not always appear during the deposition.…”

Section: Resultssupporting

confidence: 63%

Hole Subband Dispersion in Space Charge Layers under Pb/Si(001) Surfaces Measured by Angle-Resolved Photoelectron Spectroscopy

Tanigawa

Takeda

Morita

et al. 2009

e-J. Surf. Sci. Nanotechnol.

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The dispersion structure of the hole subband in a p-type space charge layer on Si(001) was investigated for the first time by angle-resolved photoelectron spectroscopy. The space charge layer was made via adsorption of Pb. The dispersion curves were in qualitative agreement with the parabolic dispersion curves with bulk effective masses obtained by the k ·p perturbation method. The observed energy levels had smaller binding energy than the levels calculated by the triangle potential approximation. This was interpreted to reflect a change of the dopant atom concentration in the subsurface region due to diffusion of dopant during flashing.

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Section: Resultssupporting

confidence: 63%

Hole Subband Dispersion in Space Charge Layers under Pb/Si(001) Surfaces Measured by Angle-Resolved Photoelectron Spectroscopy

Tanigawa

Takeda

Morita

et al. 2009

e-J. Surf. Sci. Nanotechnol.

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“…33͒ and on the Si(001)2 ϫ1 surface. 34 In the cases of well-known compound semiconductor surfaces such as InAs(001)2ϫ4 ͑Ref. 35͒ and GaAs(001)2ϫ4, 36 the surface states within the band gap have noticeable dispersions larger than 0.4 eV.…”

Section: A Overall Characteristics Of Surface State Dispersions and mentioning

confidence: 99%

Electronic structure of the Si-rich3C−SiC(001)3×2surface

et al. 1998

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The electronic structure of the Si-rich 3C-SiC͑001͒ surface with a single-domain 3ϫ2 long-range order has been studied by angle-resolved photoemission using synchrotron radiation. By identifying the topmost bulk valence band the Fermi level position at the surface is accurately determined to be located at 2.1 eV above the valence-band maximum. Four different surface state bands are clearly identified within the bulk band gap at 1.4Ϯ0.1, 2.3Ϯ0.1, 2.9Ϯ0.1, and 3.8Ϯ0.1 eV below the Fermi level, respectively. These states show no dispersion with photon energy in normal emission and both hydrogen adsorption and Si sublimation make them disappear. Dispersions and symmetry properties of the surface states were determined in detail. All four surface state bands have unusually small dispersions throughout the surface Brillouin zone suggesting strong localization of the electron orbitals within a unit cell and a unique surface bond configuration. The origins of the surface states observed in this study are ascribed to the dangling bonds of both the Si ad-dimers and the second layer Si atoms in the 3ϫ2 surface reconstruction.

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“…6 It has been shown that these chains are not metallic; their electronic structure exhibits a surface-state band gap. [7][8][9][10] It has been suggested 7 that chains of heterogeneous In-Sn dimers might exhibit metallic conductivity. Stability of such chains was tested and reported in Refs.…”

Section: Introductionmentioning

confidence: 99%

Emergence of state at Fermi level due to the formation of In-Sn heterodimers on Si(100)-2×1

et al. 2013

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Structure and electronic properties of one-dimensional bimetallic In-Sn chains formed by codeposition on a Si(100)-2×1 surface are studied experimentally by means of scanning tunneling microscopy (STM) and scanning tunneling spectroscopy and theoretically using density-functional theory. The codeposition of In with a small amount of Sn allows separation of various In-Sn structures and their identification in empty-state STM images. A 16 × 2 supercell is employed to model an indium atomic chain in which one or two Sn atoms are embedded. This atomic model is used to identify unambiguously various In-Sn structures observed experimentally. At low Sn:In ratio the codeposition results in strongly preferential formation of isolated heterogeneous In-Sn dimers. The In-Sn dimer induces tilting of the neighboring homogeneous In-In dimer accompanied with a charge transfer. Consequently a localized state at Fermi level appears. These results contribute to a discussion on possible transport of electric charge along one-dimensional atomic chains of metals.

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Electronic structure of the Si(001) surface with Pb adsorbates

Cited by 12 publications

References 40 publications

Hole Subband Dispersion in Space Charge Layers under Pb/Si(001) Surfaces Measured by Angle-Resolved Photoelectron Spectroscopy

Hole Subband Dispersion in Space Charge Layers under Pb/Si(001) Surfaces Measured by Angle-Resolved Photoelectron Spectroscopy

Electronic structure of the Si-rich3C−SiC(001)3×2surface

Emergence of state at Fermi level due to the formation of In-Sn heterodimers on Si(100)-2×1

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