2013
DOI: 10.1103/physrevb.87.195124
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Electronic structure of the hole-doped delafossite oxides CuCr1xMgxO2

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Cited by 42 publications
(38 citation statements)
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“…For in situ cleaved samples, the increase in photoemission intensity at resonance was 0.003, in line with the observed intensity changes in the copper deficient Cu x CrO y films investigated here [28].…”
Section: Resonant Photoelectron Spectroscopysupporting
confidence: 87%
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“…For in situ cleaved samples, the increase in photoemission intensity at resonance was 0.003, in line with the observed intensity changes in the copper deficient Cu x CrO y films investigated here [28].…”
Section: Resonant Photoelectron Spectroscopysupporting
confidence: 87%
“…3, the structure in the Cu L-edge around 926 eV is found to be more intense in the better conducting Cu 0.4 Cr 1 O 2.5 sample even after sputtering. A similar structure was found to appear in Mg doped CuCrO 2 , increasing in intensity with magnesium concentration by Yokobori et al [28]. The appearance of the same structure in copper deficient material suggests that the origin of the peak is a copper atom in a different electronic configuration in some defect complex involving the copper site and, e.g., an adjacent oxygen interstitial (O i ).…”
Section: B X-ray Absorption Spectroscopysupporting
confidence: 71%
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“…Copper chromium oxides contrast with other delafossites, in terms of: (i) high density of state of 3d M cations (Cr 3+ ) near the valence band maximum, (ii) covalent mixing between chromium and oxygen ions and (iii) good dopability, [17][18][19][20][21][22] making CuCrO 2 a good p-type candidate for transparent electronic devices. Several methods were reported in the literature for the synthesis of CuCrO 2 : solid-state reaction (SS), 17,[20][21][22][23][24][25][26][27][28][29][30] sol-gel (SG), [31][32][33][34][35][36][37] pulsed laser deposition (PLD), [38][39][40][41][42] magnetron sputtering (MS) 16,[43][44][45][46] and chemical vapor deposition (CVD) including spray pyrolysis. [47][48][49][50] A summary of the electrical and optical properties versus the synthesis methods and the process temperature is given in are obtained with the films deposited by sol-gel, due to the low carrier concentration.…”
Section: Introductionmentioning
confidence: 99%