Electronic Structure of Si for Pressure Near the Phase Transition

Abstract

Electronic Structure of Si for P r e s s u r e near the Phase Transition BY V. K. BASHENOV and Y. K. MARKOLENKO Semiconducting silicon is probably a crystal for which the electronic band structure is best known at zero p r e s s u r e /I/. The top of the fourth (valence) band lies at k = 0 and corresponds to the r2,i level. In the fifth (conduction) band there are three local minima of importance, the so-calledL1, r21 , and Al band edges. The minimum energy gap E( r , , l -Al) is 1.11 eV at zero