Electronic structure of semiconductors with doping superlattices

Ruden, P.P.; Döhler, G. H.

doi:10.1103/physrevb.27.3538

Cited by 141 publications

(26 citation statements)

References 14 publications

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“…One of the main merits of this device system is that the electron wave function and the electronic subband energy can be obtained analytically, which is very convenient for further calculations of the electronic properties and, hence, allows us to get easier access to the physics considerations without involving heavy numerical calculation. The PQW defines a system such as n-i-p-i-doped semiconductors, 26 the tailoring of the conduction-band edge of a graded Al x Ga 1Ϫx As structure, 27 etc. The confining potential energy of this structure can be modeled by U(z)ϭm 0 * 0 2 z 2 /2 with 0 the characteristic frequency for the confinement.…”

Section: Electronic States For a 2deg In Parallel Magnetic Fieldsmentioning

confidence: 99%

Emission of acoustic and optical phonons by hot electrons in a two-dimensional electron system in parallel magnetic fields

1996

Phys. Rev. B

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In this paper, we present a detailed theoretical study on acoustic-and optical-phonon emission by hot electrons in Al x Ga 1Ϫx As parabolic quantum wells in parallel magnetic fields. We consider the situation where the phonon generation is detected by phonon emission experiments. The dependence of phonon emission on the magnetic field, excitation power, and phonon emission angle has been studied through calculating the electron energy loss rate in this configuration. The main results obtained from the present theoretical study are the following. ͑i͒ In low-, intermediate-, and high-energy excitations, phonon generation is mainly through electron-phonon interaction via piezoelectric, deformation-potential, and polar-optical coupling, respectively. ͑ii͒ The strongest acoustic-phonon emission can be observed around a magnetic field at which an electronic subband becomes depopulated, and the strongest LO-phonon emission occurs around a magnetic field where the energy spacing between two subbands equals the LO-phonon energy ͑electrophonon resonance effect͒. ͑iii͒ Phonon generation in the presence of parallel magnetic fields has a different angular distribution from that at zero and perpendicular magnetic fields.͓S0163-1829͑96͒016619-0͔

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Section: Electronic States For a 2deg In Parallel Magnetic Fieldsmentioning

confidence: 99%

Emission of acoustic and optical phonons by hot electrons in a two-dimensional electron system in parallel magnetic fields

1996

Phys. Rev. B

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“…The exchange-correlation potential was approximated by the formula [9]     The piezoelectric potential may be written as:…”

Section: Al033ga067asmentioning

confidence: 99%

A novel Al0.33Ga0.67As/In0.15Ga0.85As/GaAs quantum well Hall device grown on (111) GaAs

Sghaier¹

2012

Semicond. Phys. Quantum Electron. Optoelectron.

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Abstract. In this study, we look at the advantages of (111) GaAs substrate over (001) one, when used to grow Hall devices by MBE. In top of that, we explore the consequence of a modified design of modulation doping pseudomorphic AlGaAs/InGaAs/GaAs, and we suggest a new quantum well structure for a Hall device grown on (111) GaAs substrate, with the objective of improving its performances. From self-consistent calculations, we find that the electron concentration n s in the interface region is enhanced. This implies that one can have a wider spacer layer and still have the same n s with the result that the mobility is improved. This result should be valuable for many types of devices. We specifically consider Hall sensors, where it is desirable to have a low electron concentration and high mobility.

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“…The total potential energy V(z) is the superposition of three terms: (i) V B (z) the potential energy due to the heterojunctionband-edge discontinuity, (ii) V XC (z) the exchange-correlation potential induced by the many body effects and which is approximated by the expression [13]:…”

Section: Computational Detailsmentioning

confidence: 99%