Electronic structure of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">SrRuO</mml:mi></mml:mrow><mml:mrow><mml:mn>3</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>

Fujioka, Kana; Okamoto, Jun; Mizokawa, T.; Fujimori, A.; Hase, Izumi; Abbate, M.; Lin, Hong Ji; Chen, C. T.; Takeda, Yasuo; Takano, Mikio

doi:10.1103/physrevb.56.6380

Cited by 110 publications

(119 citation statements)

References 25 publications

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“…First, we notice that the spectra for the SrRuO 3 surface are quite similar to the recently published data on a single crystalline film cleaned by annealing under an oxygen atmosphere (Park et al, 2004b) and grown and investigated in situ by ultraviolet spectroscopy (Kim et al, 2005). However, our spectra show more structures between 3 and 8 eV BE, as compared to previous data taken on a scraped polycrystal surface (Kim et al, 2005;Fujioka et al, 1997;Okamoto et al, 1999). The second derivative technique was used to reveal the hidden features of the spectrum (Fig.…”

Section: Resultsmentioning

confidence: 43%

“…For polycrystalline samples prepared ex situ, in situ scraping of the surface has been widely used in PES measurements (Fujioka et al, 1997;Okamoto et al, 1999). However, it was reported that PES spectral features related to electron correlation depend sensitively on the surface preparation method.…”

Section: Methodsmentioning

confidence: 99%

“…However, it was reported that PES spectral features related to electron correlation depend sensitively on the surface preparation method. Actually, SrRuO 3 films photoemission spectra taken on the in situ prepared specimens (Kim et al, 2005) or on the films cleaned by moderate heating at moderate temperatures (T $450 1C) under an O 2 atmosphere (Park et al, 2004b) show more coherent features than the scraped surface (Fujioka et al, 1997;Okamoto et al, 1999). We tried to clean the films by heating them in vacuum.…”

Section: Methodsmentioning

confidence: 99%

“…In principle, resonant photoelectron spectroscopy may be utilized to deduce a partial spectral weight (PSW) of elements in the valence band (VB) by making use of the Ru 4p-4d resonance, which was reported to occur around 52-54 eV (Park et al, 2004a(Park et al, , 2004bFujioka et al, 1997). However, the previous attempt (Fujioka et al, 1997) in this direction was not quite successful partly because the resonance is not very strong compared with the cross-section (CS) variation of the O 2p level. Another method based on the Cooper minimum (CM) phenomenon of Ru 4d photoionization CS (Fano and Cooper, 1968) was used to deduce the Ru PSW in SrRuO 3 (Park et al, 2004b) and Bi 2 À x Y x Ru 2 O 7 (Park et al, 2004a).…”

Section: Introductionmentioning

confidence: 99%

“…On the other hand, a photoemission spectroscopy (PES) study of SrRuO 3 polycrystalline samples and thin films revealed that surface cleaning by annealing at moderate temperatures of $400-450 1C in an oxygen atmosphere (Park et al, 2004b;Kim et al, 2005) provides a film surface more suitable for studying an intrinsic electronic structure than the polycrystal samples prepared by in situ scrapping (Fujioka et al, 1997;Okamoto et al, 1999).…”

Section: Introductionmentioning

confidence: 99%

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Electronic structure of epitaxial SrRuO3 films studied by resonant photoemission

Grebinskij¹,

Senulis²,

Tvardauskas³

et al. 2011

Radiation Physics and Chemistry

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a b s t r a c tThe electronic structure of epitaxial SrRuO 3 thin films annealed at 300 1C in ultra high vacuum is studied by resonant photoemission spectroscopy using synchrotron radiation. The valence band photoemission spectra show a good agreement with theoretical band structure calculations indicating a good quality of the film surface. A method was proposed, which allows extracting the partial density of states in the case of weak and broad resonance. The Ru 4d spectral weights obtained experimentally are in a very good agreement with theoretical predictions, confirming a strong mixing between Ru 4d and O 2p states, as well as the signature of electron correlation near the Fermi level in SrRuO 3 .

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Section: Resultsmentioning

confidence: 43%

Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Electronic structure of epitaxial SrRuO3 films studied by resonant photoemission

Grebinskij¹,

Senulis²,

Tvardauskas³

et al. 2011

Radiation Physics and Chemistry

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show abstract

Enhanced Photoelectrochemical Activity in All‐Oxide Heterojunction Devices Based on Correlated “Metallic” Oxides

et al. 2013

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Heteroepitaxial Control of Fermi Liquid, Hund Metal, and Mott Insulator Phases in Single‐Atomic‐Layer Ruthenates

et al. 2023

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While most devices thus far have utilized electrical charge modulation, the introduction of other physical degrees of freedom can provide numerous opportunities to design novel interfacial properties. In particular, strongly correlated electron systems of transition metal oxides provide optimal interfaces to integrate charge, spin, orbital, and lattice degrees of freedom. [6,7] So, correlated oxide heterostructures have a high potential to implement multi-state memories or multifunctional devices. [6][7][8] Most correlated oxides have high carrier densities and therefore their interactions at the heterointerfaces are significantly short. Previous studies have shown that, in the correlated oxide interfaces, charge modulations, [9][10][11] as well as magnetic, [12] orbital, [13] and structural [14] reconstructions occur within several atomic layers from the interface. There have been a few systematic studies of highelectron-mobility oxide heterostructures whose carrier densities are comparable to that of conventional semiconductors. [15,16] The short length scale of the interfacial reconstruction indicates Interfaces between dissimilar correlated oxides can offer devices with versatile functionalities, and great efforts have been made to manipulate interfacial electronic phases. However, realizing such phases is often hampered by the inability to directly access the electronic structure information; most correlated interfacial phenomena appear within a few atomic layers from the interface. Here, atomic-scale epitaxy and photoemission spectroscopy are utilized to realize the interface control of correlated electronic phases in atomic-scale ruthenate-titanate heterostructures. While bulk SrRuO 3 is a ferromagnetic metal, the heterointerfaces exclusively generate three distinct correlated phases in the single-atomic-layer limit. The theoretical analysis reveals that atomic-scale structural proximity effects yield Fermi liquid, Hund metal, and Mott insulator phases in the quantum-confined SrRuO 3 . These results highlight the extensive interfacial tunability of electronic phases, hitherto hidden in the atomically thin correlated heterostructure. Moreover, this experimental platform suggests a way to control interfacial electronic phases of various correlated materials.

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Electronic structure ofSrRuO3

Cited by 110 publications

References 25 publications

Electronic structure of epitaxial SrRuO3 films studied by resonant photoemission

Electronic structure of epitaxial SrRuO3 films studied by resonant photoemission

Enhanced Photoelectrochemical Activity in All‐Oxide Heterojunction Devices Based on Correlated “Metallic” Oxides

Heteroepitaxial Control of Fermi Liquid, Hund Metal, and Mott Insulator Phases in Single‐Atomic‐Layer Ruthenates

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