Electronic Structure Of EuCu[sub 2]Ge[sub 2] Studied By Resonant Photoemission Spectroscopy

Banik, Soma; Deb, Swarup; Phase, D. M.; Thamizhavel, A.; Garg, Alka B.; Mittal, R.; Mukhopadhyay, Rajendrani

doi:10.1063/1.3606105

Cited by 4 publications

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“…The constant initial state (CIS) spectra for the feature A at -0.65 eV has been plotted in the inset of Fig. 2(a) using the standard method discussed elsewhere 24,25 . To understand the character of this feature Fano line profile 26 The signature of hybridization between the 4f states and the conduction electrons is well known to give rise to features in the core level spectrum and is studied in detail in other rare-earth based systems 24,29 .…”

Section: Resultsmentioning

confidence: 99%

“…f 3 feature has been attributed to 5d → 4f satellite 31,32 which further confirms the hybridization of the Pr 4f states with the conduction electrons. method of broadening the DOS as mentioned elsewhere 24,25 has been adopted for comparing the experimental and theoretical PDOS of Pr 4f states as shown in Fig. 2(h).…”

Section: Resultsmentioning

confidence: 99%

“…The constant initial state (CIS) spectra for the feature A at -0.65 eV has been plotted in the inset of Fig. 2(a) using the standard method discussed elsewhere 24,25 . To understand the character of this feature Fano line profile 26 of the form σ(hν) = σ a (q+ǫ) 2 1+ǫ 2 + σ b and ǫ = (hν − E 0 )/W has been fitted and shown in the inset of Fig.…”

Section: Resultsmentioning

confidence: 99%

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Giant Rashba effect at the topological surface of PrGe revealing antiferromagnetic spintronics

Banik

Das

Bendounan

et al. 2017

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One of the main challenges in the field of spintronics is to manipulate the spin structures by electric and spin currents. In this context the materials with Rashba spin-orbit (SO) coupling 1 have gained a huge amount of interest due to their use in the Spintronics technology 2,3 . Rashba effect in the non-magnetic systems has been extensively studied 4-7 but there are very few reports on the magnetic metallic systems showing the Rashba effect [8][9][10] . In ferromagnetic (FM) materials with the SO splitting the magnetization reversal gives rise to Rashba effect which can be used for the giant magnetoresistance devices and spin transfer torque device applications 9,10 . Antiferromagnetic (AFM) materials are the hidden magnets and the magnetism in these systems is difficult to probe experimentally. The magnetization reversal in the AFM systems will not make any change because of zero net magnetic moment. In such a case, the rotation of the spins will lead to the change in the resistance and has important technological applications 11,12 . The anisotropic magnetoresistance in these AFM systems is linked to the SO interaction. Hence, the AFM systems which have significant anisotropy can be the promising candidates for the AFM spintronic devices 13 .

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

“…The constant initial state (CIS) spectra for the feature A at -0.65 eV has been plotted in the inset of Fig. 2(a) using the standard method discussed elsewhere 24,25 . To understand the character of this feature Fano line profile 26 of the form σ(hν) = σ a (q+ǫ) 2 1+ǫ 2 + σ b and ǫ = (hν − E 0 )/W has been fitted and shown in the inset of Fig.…”

Section: Resultsmentioning

confidence: 99%

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Giant Rashba effect at the topological surface of PrGe revealing antiferromagnetic spintronics

Banik

Das

Bendounan

et al. 2017

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“…Similar low energy satellite has been observed in Mn 2p core level in MnSi 1.75 14 , Mn based Heusler alloys 44 and La 0.7 Sr 0.3 MnO 3 45 , where this has been attributed to the delocalized type of screening of the 2p 3/2 holes and the presence of delocalized states at E F 45 . Such low energy satellites are also observed in rare-earth based intermetallics like CeAg 2 Ge 2 26 and PrGe 1 where it arises due to strong hybridization of the localized 4f states with the conduction electrons. We find that the intensity of the satellite line increases with decreasing temperature which could be related to the change in hybridization due to the localization of Cr states at lower temperature.…”

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“…49 . The PDOSs have been broadened by using the standard procedure reported elsewhere 1,26 . The features obtained in the valence band at www.nature.com/scientificreports/ RT shows a very good agreement with the reported theoretical calculation 49 .…”

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Large positive magnetoresistance and Dzyaloshinskii–Moriya interaction in CrSi driven by Cr 3d localization

Banik

Chattopadhyay

Tripathi

et al. 2020

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Spin chiral systems with Dzyaloshinskii-Moriya (DM) interaction due to broken inversion symmetry are extensively studied for their technological applications in spintronics and thermoelectrics. Here, we report an experimental study on the magnetization, magnetoresistance (MR) and electronic structure of a non-centrosymmetric compound CrSi with B20 crystal structure. Both magnetization and MR shows competing ferromagnetic (FM) and antiferromagnetic (AFM) correlations with the FM correlations being comparatively weaker indicating the presence of DM interaction in CrSi. A large positive MR ∼ 25% obtained at 5 K and 5 T magnetic field arises due to the stronger AFM correlations. Resonant photoemission shows both localized and itinerant nature of Cr 3d electrons to be present in CrSi and this is supported by the temperature dependence of magnetic susceptibility. Drastic variation in the density of states along with valence band broadening at low temperature indicates the increase in hybridization between Cr 3d and Si 3s-3p states which enhances the localization effects. Spin polarized itinerant Cr 3d electrons give rise to AFM spin density wave in CrSi. Magnetic interaction between the localized and itinerant Cr 3d electrons are found to be crucial for realizing DM interaction in this system. Spectral density of states derived from high resolution valence band measurements provides evidence of electronic topological transition in CrSi. Large density of polarized itinerant electrons which varies with temperature and the large positive MR with AFM correlations suggests crSi as a potential candidate for both the thermoelectric and spintronics applications. Materials with chiral magnetism have attracted immense interest in the field of spintronics and thermoelectrics due to their non-trivial response to external magnetic field, ultrafast dynamics, large magnetotransport and spin Seebeck effect 1-6. Spin chirality arises due to the competition between the Heisenberg exchange and the Dzyaloshinskii-Moriya (DM) interaction 7-9. DM interaction occurs when inversion symmetry is broken at the interfaces or in the volume of non-centrosymmetric materials and generates twisted spin alignments 7,9. DM interaction is understood in the localized moment picture with strong spin orbit coupling and broken inversion symmetry though its presence is known to give rise to weak itinerant magnetism 7-9. Broken inversion symmetry is quite obvious in the noncentrosymmetric B20 transition metal monosilicites and monogermanides like MnSi, FeGe etc. 10,11 where the presence of DM interaction is reported. However, it is found that broken inversion symmetry does not always give rise to DM interaction as it is not reported in other systems with B20 crystal structure. For example, FeSi is reported to be a non magnetic semiconductor 12 , CoSi is a non magnetic semimetal 13,14 and NiSi is a non magnetic metal 15. In this series, CrSi has been recently speculated to exhibit DM interaction and a chiral magnetic structure 16. However, a detailed investigat...

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Metal Flux Growth, Structural Relations, and Physical Properties of EuCu₂Ge₂ and Eu₃T₂In₉ (T = Cu and Ag)

et al. 2016

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Single crystals (SCs) of the compounds EuAgIn and EuCuGe were synthesized through the reactions run in liquid indium. EuAgIn crystallizes in the LaAl structure type [orthorhombic space group (SG) Immm] with the lattice parameters: a = 4.8370(1) Å, b = 10.6078(3) Å, and c = 13.9195(4) Å. EuCuGe crystallizes in the tetragonal ThCrSi structure type (SG I4/mmm) with the lattice parameters: a = b = 4.2218(1) Å, and c = 10.3394(5) Å. The crystal structure of EuAgIn is comprised of edge-shared hexagonal rings consisting of indium. The one-dimensional chains of In rings are shared through the edges, which are further interconnected with other six-membered rings forming a three-dimensional (3D) stable crystal structure along the bc plane. The crystal structure of EuCuGe can be explained as the complex [CuGe] polyanionic network embedded with Eu ions. These polyanionic networks present in the crystal structure of EuCuGe are shared through the edges of the 011 plane containing Cu and Ge atoms, resulting in a 3D network. The structural relationship between EuTIn and EuCuGe has been discussed in detail, and we conclude that EuTIn is the metal deficient variant of EuCuGe. The magnetic susceptibilities of EuTIn (T = Cu and Ag) and EuCuGe were measured between 2 and 300 K. In all cases, magnetic susceptibility data followed Curie-Weiss law above 150 K. Magnetic moment values obtained from the measurements indicate the probable mixed/intermediate valent behavior of the europium atoms, which was further confirmed by X-ray absorption studies and bond distances around the Eu atoms. Electrical resistivity measurements suggest that EuTIn and EuCuGe are metallic in nature.

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Electronic Structure Of EuCu[sub 2]Ge[sub 2] Studied By Resonant Photoemission Spectroscopy

Cited by 4 publications

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Giant Rashba effect at the topological surface of PrGe revealing antiferromagnetic spintronics

Giant Rashba effect at the topological surface of PrGe revealing antiferromagnetic spintronics

Large positive magnetoresistance and Dzyaloshinskii–Moriya interaction in CrSi driven by Cr 3d localization

Metal Flux Growth, Structural Relations, and Physical Properties of EuCu₂Ge₂ and Eu₃T₂In₉ (T = Cu and Ag)

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Electronic Structure Of EuCu[sub 2]Ge[sub 2] Studied By Resonant Photoemission Spectroscopy

Cited by 4 publications

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Giant Rashba effect at the topological surface of PrGe revealing antiferromagnetic spintronics

Giant Rashba effect at the topological surface of PrGe revealing antiferromagnetic spintronics

Large positive magnetoresistance and Dzyaloshinskii–Moriya interaction in CrSi driven by Cr 3d localization

Metal Flux Growth, Structural Relations, and Physical Properties of EuCu2Ge2 and Eu3T2In9 (T = Cu and Ag)

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Metal Flux Growth, Structural Relations, and Physical Properties of EuCu₂Ge₂ and Eu₃T₂In₉ (T = Cu and Ag)