Electronic structure of defected polyethylene for Schottky emission

Buccella, Giacomo; Ceresoli, Davide; Villa, Andrea; Barbieri, Luca; Malgesini, Roberto

doi:10.1016/j.matchemphys.2021.124268

Cited by 7 publications

(2 citation statements)

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“…This device-based zinc oxide research is being carried out for this aim. Ohmic conduction, Schottky emission, thermionic emission, tunneling conduction, hopping conduction, Frenkel-Poole emission, trapassisted electron transport, and space charge limited current are among the conduction mechanisms inside the device [3][4][5][6][7][8][9]. The Poole-Frenkel phenomenon, also known as Frenkel-Poole emission in condensed matter, is a model for trap-assisted electron transport in an electrical insulator [9,10].…”

Section: Introductionmentioning

confidence: 99%

“…This is the result of the electric interaction with the field at the metal-insulator boundary lowering the metal-insulator energy barrier. The conductivity resulting from the PF effect is discovered in the presence of bulk-limited conduction, but it is contact limited from Richardson-Schottky [4]. Oxide-based heterojunctions are manufactured and electrical transport magnitudes are studied in this study.…”

Section: Introductionmentioning

confidence: 99%

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Electrical Transport and Current Conduction Mechanisms in ZnO/Si Heterojunction Diode

Benhaliliba

2021

Int. J. Robot. Autom. Technol.

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The objective of this research is the relevant equations of electrical transport inside a junction device based on metallic oxides like zinc oxides retained on silicon substrate by spray pyrolysis process. Many characteristics, such as the heterojunction diode's non-ideal conduct, electronic conduction of electrons and gaps in the conduction and valence bands, charge carriers caught by trap centers, hopping conduction, and tunnel effect, are used in various conduction processes at electronic junctions. Poole-Frenkel (PF) emission, Schottky emissions, and trap aided tunneling are some of the other conduction mechanisms examined inside forward/reverse bias for ZnO/Si heterojunctions (TAT). This article also confirms, addresses, and elucidates the effect of temperature on the I-V properties of ZnO/Si. https://ecee.colorado.edu/~bart/book/book/chapter3/ch3_9.htm

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