1998
DOI: 10.1134/1.1130478
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Electronic structure of deep centers in LiNbO3

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Cited by 32 publications
(19 citation statements)
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“…However after annealing at 500 °C the band with the maximum at 500-520 nm is predominant. It is necessary to note that authors in [15] have also observed the similar difference in spectra after reducing annealing of thin LN plates in vacuum. After annealing at 700 °C the absorption in the short-wave region prevails in an area, which is adjacent to the sample surface.…”
Section: Annealing In Hmentioning
confidence: 95%
“…However after annealing at 500 °C the band with the maximum at 500-520 nm is predominant. It is necessary to note that authors in [15] have also observed the similar difference in spectra after reducing annealing of thin LN plates in vacuum. After annealing at 700 °C the absorption in the short-wave region prevails in an area, which is adjacent to the sample surface.…”
Section: Annealing In Hmentioning
confidence: 95%
“…Because the UV peak at 322 nm is near the UV absorption edge of CLN, it should be correlated with the O 2−/− -V Li − defect. Akhmadullin et al and Yan et al [20][21][22] reported that Q polarons can be formed in reduced CLN and serves as photorefractive centers. More importantly, Q polarons are responsible for the absorption band at about 3.5 eV.…”
Section: Absorption Spectramentioning
confidence: 99%
“…As electrons are the dominant carriers in our samples, intrinsic defects or clusters that can serve electrons to the conduction band may be considered photorefractive centers. As described in the Introduction, based on Li-vacancy model, the main intrinsic defects of CLN are Li vacancies (V Li − ) and [19]; and Q polarons can be considered a combination of two equivalent bipolarons [20][21][22].…”
Section: Absorption Spectramentioning
confidence: 99%
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