Electronic structure of cubic silicon carbide with substitutional 3d impurities at Si and C sites

Medvedeva, N. I.; Yur’eva, E. I.; Ivanovskiĭ, A. L.

doi:10.1134/1.1626200

Cited by 12 publications

(19 citation statements)

References 14 publications

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“…Excess Ni (i.e., 5%) resulted in the formation of Ni 2 Si, as also reported by Eriksson et al 28 The decrease in the lattice parameters a and d (Table II, Fig. 2(b)), caused by introducing Ni into the lattice of SiC, may be due to the fact that the atomic radius of Ni (1.24 Å) is smaller than that of Si (1.34 Å), which also agrees with the theoretical results of Medvedeva et al 18 …”

Section: Discussionsupporting

confidence: 89%

“…The holes in the Ni/SiC solid solution, generated from electron transitions from the valence band to the acceptor states, migrate to‐and‐fro to form relaxation polarization and loss under the alternating electromagnetic field. Meanwhile, due to the appearance of hybridized Ni‐3 d –C‐2 p –Si‐3 p states above the Fermi level, the doped 3C–SiC becomes semimetallic 18 . In other words, Ni seems to increase the conductivity of SiC, which also increases the values of ɛ′ and ɛ″ in the synthesized powders.…”

Section: Discussionmentioning

confidence: 96%

“…The 3 d transition metals are generally considered to be efficient dopants for modifying SiC properties 14–18 . However, there is poor documentation in the literature on cubic silicon carbide doped with nickel (Ni).…”

Section: Introductionmentioning

confidence: 99%

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Production of Ni-Doped SiC Nanopowders and their Dielectric Properties

Jin

Cao

et al. 2011

Journal of the American Ceramic Society

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Nanopowders of nickel‐doped β‐silicon carbide (β‐SiC) with improved dielectric properties (compared with pure β‐SiC) were successfully produced using the mechanically activated self‐propagating high‐temperature synthesis method in an argon (Ar) atmosphere. The molar substitution of nickel (Ni) for silicon (Si) was 1%, 3%, and 5%. Powders of poly(tetrafluoroethylene) and ammonium chloride (NH4Cl) were used to promote the combustion reaction. The experimental results indicated an active role of Ni in the mechanism of combustion synthesis of SiC powders, which was reflected in the increase in combustion temperature and the velocity of propagation of the combustion wave, the microstructure of the produced nanopowders with a grain size of 100 nm for 5% Ni, and an improvement in the dielectric properties, specifically the increase in real (ɛ′) and imaginary parts (ɛ″) of the complex permittivity, in the frequency range of 8.2–12.4 GHz, compared with pure SiC. The X‐ray analysis of the produced powders suggests that Ni is accommodated in the lattice of SiC, which shrinks with increasing amounts of Ni.

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Section: Discussionsupporting

confidence: 89%

Section: Discussionmentioning

confidence: 96%

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Production of Ni-Doped SiC Nanopowders and their Dielectric Properties

Jin

Cao

et al. 2011

Journal of the American Ceramic Society

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“…It has been revealed that most of the 3d-dopants mainly occupy the Si sub-lattice sites in 3C-SiC, but Mn is expected to occupy the C sub-lattice sites [17]. The Cror Mn-doped 3C-SiC has magnetic moment, but the Ni-, Fe-, and Co-doped 3C-SiC does not exhibit any magnetic moment [20]. Furthermore, Ni-doped 3C-SiC features semi-metallic properties and rather weak relaxation effects [1].…”

Section: Introductionmentioning

confidence: 98%

“…The electrical and magnetic properties of 3C-SiC doped with 3d-metals have recently been studied by the method of linear muffin-tin orbitals (LMTOs) using the tight-binding approximation and the super-cell model [1,[17][18][19][20]. It has been revealed that most of the 3d-dopants mainly occupy the Si sub-lattice sites in 3C-SiC, but Mn is expected to occupy the C sub-lattice sites [17].…”

Section: Introductionmentioning

confidence: 99%