Electronic Structure of Copper Impurities in ZnO

Dietz, R. E.; Kamimura, Hiroshi; Sturge, M. D.; Yariv, A.

doi:10.1103/physrev.132.1559

Cited by 233 publications

(76 citation statements)

References 21 publications

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“…Firstly the Zeeman data yield an anisotropic gfactor for the ground state of the hole which closely matches that found for the known Cu 2+ IR absorption transition at ~ 717 meV. 6 Secondly, the ZPL region shows two sharp and nonthermalising lines with an intensity ratio close to the known 63 Cu / 65 Cu natural isotope distribution ratio. Finally, the emission is generally only seen in crystals with some degree of Cu impurity.…”

mentioning

confidence: 60%

“…This is despite the availability of such data (at least in part) for the 717 meV IR transition. 6 In Dingle's main work, attempts at producing such samples were alluded to, but these attempts failed, due to strain broadening of the ZPL doublet. The absence of this critical experimental data means that the association of the SGB to a single substitutional Cu 2+ atom is not as yet unambiguously proven.…”

Section: -4 9 A)mentioning

confidence: 99%

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Unambiguous identification of the role of a single Cu atom in the ZnO structured green band

Byrne

Herklotz

Henry

et al. 2012

J. Phys.: Condens. Matter

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High quality and purity single crystal ZnO samples doped with single isotopes of 63 Cu and 65 Cu, with equal concentrations of both these isotopes, and with natural Cu using a wet chemical atomic substitution reaction and anneal were studied using low temperature optical spectroscopy. Our data on the zero phonon line of the structured green band in ZnO confirm unambiguously the involvement of a single Cu atom in this defect emission. These data allow us to confirm the main features of the assignment proposed by Dingle in 1969 and to comment further on the defect structure.

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mentioning

confidence: 60%

Section: -4 9 A)mentioning

confidence: 99%

Unambiguous identification of the role of a single Cu atom in the ZnO structured green band

Byrne

Herklotz

Henry

et al. 2012

J. Phys.: Condens. Matter

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“…At the same time, only Cu has been predicted to exist in a highly stable singly-ionized (TM + ) state in ZnO. Due to the strong ionicity of ZnO, most of TM impurities exhibit a strong 3d electron character (Dietz et al 1963). The formation of multiplet states within the band gap of ZnO results from the splitting of the TM state into two E and T 2 symmetry states by the internal field of the crystal.…”

Section: Role Of Tm-impuritiesmentioning

confidence: 99%

“…In parallel, the results of Energy Dispersive Spectroscopy (EDS) have confirmed the presence of Cu traces in the samples, Figure 2, right, and agree with the Photoluminescence (PL) measurement results, which are discussed below. According to previous EPR studies, interstitial and substitutional Cu remain a most common defect in bulk ZnO crystals unintentionally/intentionally contaminated with Cu (Dietz et al 1963;Broser and M.Schultz 1969). In the case of in-situ Cu doping, i.e.…”

Section: Vls Fabrication and Structural Characteristics Of Cu:zno Nanmentioning

confidence: 99%

Transition Metal-Doped ZnO Nanowires: En Route Towards Multi-colour Light Sensing and Emission Applications

Kouklin¹,

Omari²,

Gupta³

2010

Nanowires Science and Technology

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368and strength of the chemical bonds of wide-band gap semiconductors, photodetectors engineered based on most of metal-oxides can withstand highly elevated T and hostile environments. Despite the fact that carrier mobilities are much smaller in cases of metal oxides compared with those of many conventional semiconductors, owing to the drastically increased dielectric strength of metal oxides, much larger carrier velocities can be readily achieved by applying much higher electric fields/device biases. The property remains critical for reducing the photogenerated carrier transit time and thus improving gain characteristics of the photodetectors. Advances in nanofabrication methodologies now allow growing many metal-oxide nanowires, including in ZnO as dislocation-free, highly faceted single crystals, which according to the above-made discussion show significant promise for diverse nanophotodetector device as well as light-emission applications. At the same time, compared to cSi, ZnO nanowires typically exhibit a very limited intrinsic sensitivity to visible and infrared radiation, whereas the sensitivity to short-wavelength photons also tends to be reduced as a result of their small diameter and relative increase in the number of the surface defect states. In this chapter, we provide a brief review on the progress in engineering highresponsitivity ZnO nanowire photodetectors operating in an extended, i.e., ultravioletvisible spectral range. Particular attention is paid to the use and role of transition metal dopants to enhance the light sensitivity of ZnO nanowires/nanorods grown by seeded vapor-transport methods. Detailed consideration is given to several key aspects pertaining to the transport, photoconduction, and time-response characteristics of two-terminal metalsemiconductor-metal nano-photodetectors operating at both pre-avalanche and avalanche regimes. This review might be important to scientists working in with high-sensitivity and multispectral oxide-based nano-photodetectors, optical switches, and sensors.

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“…Zn (3d 9 4s 2 ) on Zn sites, 15,16 infrared luminescence data point towards the existence of several different Cu defects. 2,5 In addition, resistivity measurements found the conductivity change in Cu-doped ZnO to be roughly proportional to the square of the Cu concentration and were explained by the passivation of Cu Zn acceptors by O vacancies, 17,18 or the formation of acceptor-type Cu 2ϩ -Cu 2ϩ pairs.…”

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confidence: 99%

Lattice location and stability of implanted Cu in ZnO

Wahl¹,

Rita²,

Correia³

et al. 2004

Phys. Rev. B

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The lattice location of copper in single-crystalline zinc oxide was studied by means of the emission channeling technique. Following 60-keV room-temperature implantation at a fluence of 2.3ϫ10 13 cm Ϫ2 , the angular distribution of ␤ Ϫ particles emitted by the radioactive isotope 67 Cu was measured by a position-sensitive detector. The ␤ Ϫ emission patterns give direct evidence that in the as-implanted state a large fraction of Cu atoms ͑60%-70%͒ occupy almost ideal substitutional Zn sites with root-mean-square ͑rms͒ displacements of 0.16 -0.17 Å. However, following annealing at 600°C and above Cu was found to be located on sites that are characterized by large rms displacements ͑0.3-0.5 Å͒ from Zn sites.

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Electronic Structure of Copper Impurities in ZnO

Cited by 233 publications

References 21 publications

Unambiguous identification of the role of a single Cu atom in the ZnO structured green band

Unambiguous identification of the role of a single Cu atom in the ZnO structured green band

Transition Metal-Doped ZnO Nanowires: En Route Towards Multi-colour Light Sensing and Emission Applications

Lattice location and stability of implanted Cu in ZnO

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