2011
DOI: 10.1016/j.physb.2011.05.034
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Electronic structure of (BP)n/(BAs)n (001) superlattices

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Cited by 24 publications
(13 citation statements)
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“…These critical features are qualitatively comparable to results from other theoretical calculations. 31,37,42,43,46 The drastic difference between our calculated band gap and the others precludes any quantitative agreement. There is no experimental report, known to us, on these critical features for zb-BP.…”
Section: Resultsmentioning
confidence: 66%
“…These critical features are qualitatively comparable to results from other theoretical calculations. 31,37,42,43,46 The drastic difference between our calculated band gap and the others precludes any quantitative agreement. There is no experimental report, known to us, on these critical features for zb-BP.…”
Section: Resultsmentioning
confidence: 66%
“…Semiconductors are used in a variety of remarkable device applications. Superlattices have been made available for use in many applications owing to developments in their production techniques, such as the strain-induced lateral ordering process [1,2], molecular beam epitaxy [2,3] and low-pressure chemical-vapor deposition [2,4]. The development of superlattices is actively being researched by studying the properties of superlattices with reduced size and dimensionality and by understanding their properties within the context * E-mail: rachdj@yahoo.fr of designing new electronic and optoelectronics devices.…”
Section: Introductionmentioning
confidence: 99%
“…Superlattices (SLs) are structures that are made up of two types of semiconducting (s.c) materials, with one type (s.c 1 ) acting as a quantum well and the other (s.c 2 ) acting as a quantum barrier [2]. In the present work, we explore the structural and electronic properties of the II-VI semiconductor compounds BeTe and ZnSe.…”
Section: Introductionmentioning
confidence: 99%
“…The superlattice is thus a periodic structure with period d = L w + L b . The artificial periodicity created in superlattices can lead to the tailoring of certain material properties for applications in fields such as optoelectronics [3,4]. The presence of these ultrathin layers leads to the quantum size effect when the physical dimensions of the layers are comparable to the de Broglie wavelength of the charge carrier [5].…”
Section: Introductionmentioning
confidence: 99%
“…Total density of states (DOS) and partial DOS obtained by the approximation GGA of (ZnTe) 4 /(CdTe)4 .…”
mentioning
confidence: 99%