Electronic structure, magnetoresistance and spin filtering in graphene|2 monolayer-CrI3₃|graphene van der Waals magnetic tunnel junctions

Abstract

We investigate the structural configuration, electronic structure and spin-polarized quantum transport of graphene|2 monolayer-CrI3|graphene heterostructure with Ag(111) layers as the electrode, using density functional theory.

Spin‐Selective Memtransistors with Magnetized Graphene

“…Even though the previous theoretical studies revealed the hybridization of the CrI 3 /graphene interface, its impacts on the magnetic coupling have not been well understood. [ 30–32,34 ]…”

“…Even though the previous theoretical studies revealed the hybridization of the CrI 3 /graphene interface, its impacts on the magnetic coupling have not been well understood. [30][31][32]34] To gain a detailed understanding and a deeper insight into the proximity effect, we performed first-principles calculations based on density functional theory. [43][44][45] The results of the interlayer exchange interaction (J inter ) are presented in Figure 4d.…”

“…[24][25][26] Critical issues remain for novel device operation, including a direct probe, and the optimized use of the delicate interactions (i.e., magnetic proximity) in the magnetic vdW systems. For example, while former theoretical studies [27][28][29] have suggested that a graphene monolayer on CrI 3 can exhibit intriguing magnetic properties, such as spin-polarized band hybridization with valley splitting, [30] giant tunneling magnetoresistance, [31] and Chern insulating state, [32] experimental demonstrations have been lacking. Moreover, further investigations of the major physical origins of phenomenologically-treated ME and ES effects are of crucial importance for the control of atomically thin magnetized materials and the optimized design of delicate spintronic devices based on vdW heterostructures.…”

Large tunneling magnetoresistance in van der Waals magnetic tunnel junctions based on FeCl2films with interlayer antiferromagnetic couplings

“…1(e) caused by inherent electronic characteristics and interface splice. 62,63 So the central edge states in Fig. 7(a) can easily pass through the center in Fig.…”

Non-uniform superlattice magnetic tunnel junctions

“…Various 2D in-plane and van der waals (vdw) heterostructures have been explored in the quest of achieving a high TMR and a decimated power consumption. For example, the first principle calculation of vdw heterostructures such as Co/ MoS2/graphene/MoS2/Co [37] and Au/graphene/2 monolayer of CrI3/graphene/Au [38] have predicted to engender a TMR of 1270% and 2 × 10 4 % respectively. On the other hand, ab initio calculations of in-plane heterostructures like VS 2 /MoS 2 /VS 2 have revealed a TMR of 4 × 10 3 % [39].…”