Electronic structure in low dimensional and correlated transition metal oxides: high resolution photoemission and X-ray emission studies

Electronic structure in thin film organic semiconductors studied using soft X-ray emission and resonant inelastic X-ray scattering

“…Similar hybridization has been observed in other vanadium oxides, as is illustrated by the spectrum for Cr-doped V 2 O 3 in Fig. 2 [4,5,20], and also appears in the calculated PDOS. SXE has been shown to be a very sensitive method of measuring hybridized states in both the valence band and in shallow core levels in many transition metal oxides [24 -26].…”

“…Fig. 2 also presents the measured O 2p SXE spectra from a 1.5% Cr-doped V 2 O 3 [4,5], and from gas phase O 2 [23]. (The measured O 2p PDOS for a 1.5% Cr-doped V 2 O 3 is identical to that of pure V 2 O 3 .)…”

“…It has recently been shown that synchrotron radiation-excited resonant soft X-ray emission (SXE) spectroscopy is a very powerful tool for studying electronic structure in such materials [3]. SXE has a distinct advantage over photoemission spectroscopy in that resonant SXE is a non-ionizing spectroscopy, and directly measures the element specific partial density of states (PDOS) [4][5][6]. Furthermore, as will be discussed below, electronic excitations from occupied valence states to unoccupied conduction band states can be measured in the variant of the emission experiment known as resonant inelastic X-ray scattering (RIXS) [7 -9].…”

“…6. O K-edge SXE spectra reflecting the occupied O 2p PDOS in VO -Pc, 1.5% Cr-doped V 2 O 3[5], and molecular O 2[23]. The nominal excitation energies are indicated.…”

Electrical resistivity peculiarities and positron lifetime in annealed CdO

“…A high electrical resistivity, typical in such II−VI semiconductors, is expected for CdO. However, the existence of an anomalously small band gap [2] and intrinsic defect centers [3] turn it to a low resistive material. Large variations in resistivity have been reported [4].…”