Electronic structure in a Si-doped (GaP)₁/(InP)₁strained-layer superlattice

Abstract

The electronic structure of lightly and heavily Si-doped (Wl)-oriented (Gap),/ (InP), strained-layer superlattices (sus) is calculated by using a recursion method with a cluster containing about loo00 atoms. Si-impurity-related states are at E, -0.09eV or -0.06eVinn-~elightdopingwhenaSiissubstitutedforaGaoranInatom,respectively.In p-*e light doping, they are at E, + 0.26 eV. On increase in the Si impurities in the ntype systems, the energy gaps of the density of states decrease from 1.91 to 1.51eV. A description of the Si influence on electronic occupancy is given. The structural parameters of thestahle (W1)-oriented (GaP),/(inP), s1s are determined by the Keating model.