Electronic structure, galvanomagnetic and magnetic properties of the bismuth subhalides Bi4I4 and Bi4Br4

Filatova, Taisia G.; Gurin, Péter; Kloo, Lars; Kulbachinskii, V. A.; Kuznetsov, A. N.; Кытин, В. Г.; Lindsjö, Martin; Popovkin, B. A.

doi:10.1016/j.jssc.2007.01.010

Cited by 40 publications

(40 citation statements)

References 11 publications

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“…The 3D bulk Bi 4 Br 4 is a vdW layered semiconductor. 18 Its interlayer binding energy is comparable to other layered systems that have been successfully exfoliated, such as graphite and MoS 2 . Hence, the single layer Bi 4 Br 4 could be made via the mechanical exfoliation from the bulk form.…”

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confidence: 71%

Large-Gap Quantum Spin Hall Insulator in Single Layer Bismuth Monobromide Bi₄Br₄

et al. 2014

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Quantum spin Hall (QSH) insulators have gapless topological edge states inside the bulk band gap, which can serve as dissipationless spin current channels. The major challenge currently is to find suitable materials for this topological state. Here, we predict a new large-gap QSH insulator with bulk direct band gap of ∼0.18 eV, in single-layer Bi 4 Br 4 , which could be exfoliated from its three-dimensional bulk material due to the weakly-bonded layered structure. The band gap of single-layer Bi 4 Br 4 is tunable via strain engineering, and the QSH phase is robust against external strain. Moreover, because this material consists of special one-dimensional molecular chain as its basic building block, the single layer Bi 4 Br 4 could be torn to ribbons with clean and atomically sharp edges. These nano-ribbons, which have singleDirac-cone edge states crossing the bulk band gap, are ideal wires for dissipationless transport.

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confidence: 71%

Large-Gap Quantum Spin Hall Insulator in Single Layer Bismuth Monobromide Bi₄Br₄

et al. 2014

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“…Markedly, with a chemical formula as simple as the prototype STI Bi 2 X 3 (X=Se, Te), β-Bi 4 X 4 are real crystalline solids rather than artificial periodic heterostructures. β-Bi 4 I 4 has been successfully grown as a large crystal before [20][21][22][23], and β-Bi 4 Br 4 is demonstrated to be similarly stable [24]. After revealing their unique crystal structure, topological band properties, and surface Lifshitz transitions, we further examine their topological phase transitions under uniaxial strain.…”

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confidence: 99%

“…The two phases crystallize in the same monoclinic space group C 3 2h (C2/m), and differ only in the way their building blocks are stacked [20][21][22][23]. The α phases turn out to be normal insulators [24].…”

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confidence: 99%

Weak Topological Insulators and Composite Weyl Semimetals:β−Bi4X4(X
Liu
¹
,
Zhou
²
,
Yao
³

et al. 2016
Phys. Rev. Lett.
88
3
88
0
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While strong topological insulators (STI) have been experimentally realized soon after their theoretical predictions, a weak topological insulator (WTI) has yet to be unambiguously confirmed. A major obstacle is the lack of distinct natural cleavage surfaces to test the surface selective hallmark of WTI. With a new scheme, we discover that β-Bi4X4 (X=Br, I), dynamically stable or synthesized before, can be prototype WTI with two natural cleavage surfaces, where two anisotropic Dirac cones stabilize and annihilate, respectively. We further find four surface-state Lifshitz transitions under charge doping and two bulk topological phase transitions under uniaxial strain. Near the WTI-STI transition, there emerges a novel Weyl semimetal phase, in which the Fermi arcs generically appear at both cleavage surfaces whereas the Fermi circle only appears at one selected surface.

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“…Going back to the binary bismuth halogenides one finds two possibilities of a strip termination influencing crucially the conductivity of the compound. Based on this property, compounds have been classed into two series with either semiconducting or metallic properties [34,35]. Ab initio calculations predict that the conductivity type is directly connected to the type of the layer termination by halogenide ions, which is either "open" or "closed" with respect to the honeycomb net of bismuth atoms (Fig.…”

Section: "Chemical Scissors" At Workmentioning

confidence: 99%

Bismuth‐based candidates for topological insulators: Chemistry beyond Bi₂Te₃

Isaeva

Rasche

Ruck

2013

Physica Rapid Research Ltrs

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IntroductionThe booming field of topological insulators has established an elaborate, consistent theory and is now tackling further challenges such as the search for topologically protected systems with strong electron interactions and systems capable of demonstrating the Majoranafermion phenomenon. A fascinating goal looming a little ways down the road is fault-tolerant quantum computing [1].On this way we are challenged by many engineering and chemical problems. For instance, bismuth-chalcogenide TIs have to be tuned by well-controlled doping, and investigations of predicted 3D TIs with nearly cubic structures are hampered by exfoliation failures. Whereas many studies are aiming at nanostructurization of Bi 2 Q 3 , Q = Se, Te (in organic solutions [2], on mica substrates [3]) and tuning it for future applications (synthesis of ultrathin films [4] and heterostructures where quintuple layers of Bi 2 Q 3 are interlaced with insulating slabs [5]), the search for new candidate compounds is also underway.

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Electronic structure, galvanomagnetic and magnetic properties of the bismuth subhalides Bi4I4 and Bi4Br4

Cited by 40 publications

References 11 publications

Large-Gap Quantum Spin Hall Insulator in Single Layer Bismuth Monobromide Bi₄Br₄

Large-Gap Quantum Spin Hall Insulator in Single Layer Bismuth Monobromide Bi₄Br₄

Weak Topological Insulators and Composite Weyl Semimetals:β−Bi4X4(X
Liu
¹
,
Zhou
²
,
Yao
³

et al. 2016
Phys. Rev. Lett.
88
3
88
0
View full text Add to dashboard Cite

Bismuth‐based candidates for topological insulators: Chemistry beyond Bi₂Te₃

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Electronic structure, galvanomagnetic and magnetic properties of the bismuth subhalides Bi4I4 and Bi4Br4

Cited by 40 publications

References 11 publications

Large-Gap Quantum Spin Hall Insulator in Single Layer Bismuth Monobromide Bi4Br4

Large-Gap Quantum Spin Hall Insulator in Single Layer Bismuth Monobromide Bi4Br4

Weak Topological Insulators and Composite Weyl Semimetals:β−Bi4X4(XLiu1, Zhou2, Yao3 et al. 2016Phys. Rev. Lett.883880View full textAdd to dashboardCite

Bismuth‐based candidates for topological insulators: Chemistry beyond Bi2Te3

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Large-Gap Quantum Spin Hall Insulator in Single Layer Bismuth Monobromide Bi₄Br₄

Large-Gap Quantum Spin Hall Insulator in Single Layer Bismuth Monobromide Bi₄Br₄

Weak Topological Insulators and Composite Weyl Semimetals:β−Bi4X4(X
Liu
¹
,
Zhou
²
,
Yao
³

et al. 2016
Phys. Rev. Lett.
88
3
88
0
View full text Add to dashboard Cite

Bismuth‐based candidates for topological insulators: Chemistry beyond Bi₂Te₃